Wuxi Power Supply Branch of State Grid Jiangsu Electric Power Co., Ltd.

Gpower Semiconductor, Inc.

Junfeng Wu

Xi Wu

Zhaoyun Leng

Bin Fei

Jin Miao

Yin Gu

Ping Chen

Yi Pei

Xingxing Wu

Haiping Shen

Fen Huang

Xinyang Zhou

Jiefeng Wan

Ming Ren

Jun Qin

The present disclosure discloses a semiconductor device, a method of manufacturing the same, and a semiconductor package structure. The semiconductor device including a substrate, a multilayer semiconductor layer located on one side of the substrate, in which a Two-Dimensional Electron Gas is formed, a first source, a first gate and a first drain located on one side of the multilayer semiconductor layer and located within an active region of the multilayer semiconductor layer, the first gate being located between the first source and the first drain, and a back surface gate contact electrode located on one side of the substrate away from the multilayer semiconductor layer, wherein the first gate is electrically connected to the back surface gate contact electrode. A signal is provided from the back surface of the semiconductor device to the first gate, to reduce the parasitic inductance and parasitic resistance caused by the device during the packaging process.

Semiconductor device comprising a drain back contact electrode, method of manufacturing the same, and semiconductor package structure

A method for determining phase locking of critical arc light includes: step: monitoring and collecting light radiation intensity of an arc inside a switch cabinet in real time, and converting the collected light radiation intensity into an electrical signal; step: extracting a power-frequency fundamental wave of the electrical signal, comparing an amplitude of the power-frequency fundamental wave of the electrical signal with a first threshold, and generating a pre-warning signal based on a comparison result of the first threshold; step: comparing the amplitude of the power-frequency fundamental wave of the electrical signal with a second threshold voltage, and generating a control signal based on a comparison result of the second threshold voltage and a protection time threshold; and step: protecting the switch cabinet under the critical arc light environment based on the pre-warning signal and the control signal.

Method and apparatus for determining phase locking of critical arc light

A partial discharge (PD) detection apparatus for gas-insulated equipment includes a photon collector, an optical splitter, a first photoelectric conversion module, an ultraviolet fluorescent crystal, a second photoelectric conversion module, and a signal processing module, where the ultraviolet fluorescent crystal is configured to convert a second optical radiation signal into an optical radiation signal of an ultraviolet fluorescence band, and the signal processing module is configured to calculate first apparent intensity based on a first voltage signal output by the first photoelectric conversion module, calculate second apparent intensity based on a second voltage signal output by the second photoelectric conversion module, and determine discharge intensity of the optical radiation based on a ratio of the second apparent intensity to the first apparent intensity. Technical solutions of the present disclosure are not affected by an unknown distance between a discharge position and a detection point.

Partial discharge (PD) detection apparatus for gas-insulated equipment

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Jiangsu, China

Junfeng Wu