Cypress Semiconductor Corporation

Junfei Fan

Jeffery Scott Hunt

Andrew L Hawkins

George M Ansel

Daniel Eric Cress

David Robert Lindley

Jeffrey W Gossett

Michael D Carlson

A memory having a circuit including a built-in address counter with a test mode. The address counter may be used to generate the memory array addressing for the different array test patterns. The circuit may comprise a logic circuit and a counter circuit. The logic circuit may be configured to generate one or more control signals in response to one or more control inputs. The counter circuit may be configured to generate a first counter output and a second counter output in response to (i) the control outputs and (ii) one or more inputs. The counter may comprise a first portion configured to generate the first counter output and a second portion configured to generate the second counter output.

Address counter test mode for memory device

An apparatus comprising a first compare circuit, a second compare circuit and a memory. The first compare circuit may be configured to present a first match signal in response to a first address and a second address. The second compare circuit may be configured to present a second match signal in response to the first match signal, a first write enable signal and a second write enable signal. The memory may also be configured to present the first and second write enable signals. In one example, the memory may be configured to store and retrieve data with zero waiting cycles in response to the second match signal.

Port prioritization scheme

An apparatus comprising a memory array having a first port and a one or more other ports and a control circuit configured to couple (i) a bitline of the first port to a corresponding bitline of the one or more other ports and (ii) a dataline of the first port to a corresponding dataline of the one or more other ports in response to the first port and the one or more other ports accessing a common address.

Bitline/dataline short scheme to improve fall-through timing in a multi-port memory

The present invention concerns a circuit comprising a memory, a flag/array address circuit and a flag logic circuit. The memory may be configured to read and write data in response to one or more memory address signals. The flag/array address circuit may be configured to present one or more flag address signals in response to (i) one or more enable signals and (ii) a control signal. The flag logic circuit may be configured to present one or more logic flags in response to the one or more flag address signals.

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Mississippi State, MS, United States of America

Junfei Fan