Samsung Electronics Co., Ltd.

Junetaeg Lee

Myung-Sun Kim

Kangmin Lee

Hongki Kim

Jung-Saeng Kim

Seung-hun Shin

Soo-Kyung Kim

Seungjoo Nah

Taeseok Oh

Seokha Lee

Hakyu Choi

Jaesang Yoo

Seunghyun Song

Wonje Park

Yu Jin Ahn

Dongmin Han

Jung-kuk Park

Jaesung Yun

JeongWook Ko

Younghoon Park

Sungkwan Kim

Disclosed is an image sensor including a first substrate having first and second surfaces opposite to each other and including a pixel array area that includes unit pixel regions, a pad area that surrounds the pixel array area, and an optical black area between the pixel array area and the pad area, a dielectric pattern on the first surface of the first substrate, and a light-shield pattern on a top surface of the dielectric pattern on the optical black area. The first substrate includes first and second trenches recessed from the first surface. The dielectric pattern includes a first part filling the first trench and defining the unit pixel regions, a second part filling the second trench, and a third part on the first surface of the first substrate and connected to the first and second parts.

Image sensor with trench structures filled with a dielectric pattern and overlapped by a light shield pattern

Provided is an image sensor including a sensor chip including a first substrate and a first interconnection layer, a logic chip including a second substrate and a second interconnection layer, a through-hole penetrating a portion of the second interconnection layer, the first substrate, and the first interconnection layer, and a first connection structure disposed on an inner surface of the through-hole and extending from the first substrate toward the second interconnection layer, wherein the first interconnection layer includes a first interlayer insulating layer and a first interconnection pattern, the second interconnection layer includes a second interlayer insulating layer and a second interconnection pattern, the through-hole includes first and second trenches respectively extending from the through-hole toward the second interconnection layer, bottom surfaces of the first and second trenches contact the second interconnection pattern, and a bottom surface of the through-hole contacts the first interconnection pattern.

Complementary metal-oxide semiconductor (CMOS) image sensor

An image sensor includes a substrate that has a first pixel region and a second pixel region and a microlens layer on a first surface of the substrate. The microlens layer includes a first lens pattern on the first pixel region of the substrate; and a second lens pattern on the second pixel region of the substrate. A width of the first pixel region is greater than a width of the second pixel region, and a height of the first lens pattern is greater than a height of the second lens pattern.

Image sensor having high pixel integration

A device includes first patterns, second patterns, and a second sample pattern on a semiconductor substrate. The second patterns are horizontally spaced apart at an equal interval from the second sample pattern. The second sample pattern includes first and second sidewall facing each other, a first point on the first sidewall, and a second point on the second sidewall. The second sample pattern and the most adjacent first pattern in relation to the second sample pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point. The first horizontal distance is greater than a second horizontal distance in the direction between one second pattern of the second patterns and a most adjacent first pattern in relation to the one second pattern.

Semiconductor devices and image sensors

A semiconductor device includes a substrate, a circuit layer formed on a first surface of the substrate and including a via pad and an interlayer insulating layer covering the via pad, a via structure configured to fully pass through the substrate, partially pass through the interlayer insulating layer and be in contact with the via pad, a via isolation insulating layer configured to pass through the substrate and be spaced apart from outer side surfaces of the via structure in a horizontal direction and a pad structure buried in the substrate and exposed on a second surface of the substrate opposite the first surface of the substrate.

Semiconductor devices having a pad structure

Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.

Image sensor and method of fabricating the same

A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Image sensor and fabricating method thereof

Growing community of inventors

Suwon-si, South Korea

Junetaeg Lee