Lg Innotek Co., Ltd.

JuneO Song

HwanHee Jeong

KwangKi Choi

Sangyoul Lee

Hyunseoung Ju

WooSik Lim

SungHo Choo

Sojung Kim

MyeongSoo Kim

DukHyun Park

ChungSong Kim

JiHyung Moon

A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

Method for manufacturing light emitting device having an active layer formed over a Ga-face

Disclosed is a light emitting structure comprising a first semiconductor layer, a substrate, a reflection electrode disposed on the substrate, a light transmitting electrode disposed on the reflection electrode, and a light emitting structure disposed on the light transmitting electrode, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layer. The light transmitting electrode has a thickness of 20 to 200 &#x212b;.

Light emitting device

Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer.

Light emitting device with electrode having plurality of adhesive seeds spaced from one another on the light emitting structure

Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device.

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Seoul, South Korea

JuneO Song