Samsung Electronics Co., Ltd.

Junemo Koo

Changrok Moon

Byungjun Park

Jongcheol Shin

Namgil Kim

Yoondong Park

Tae Eung Yoon

Sangjun Choi

HyungJin Bae

Ihara Hisanori

Youngwoo Chung

Eungkyu Lee

HoonSang Oh

Juneyoung Park

Sungkwon Hong

Jeongrae Jo

Jinpyo Kim

Provided is an image sensor including a substrate, in which a pixel area including a plurality of unit pixels, an optical black area located outside of the pixel area, and an alignment key area located outside of the pixel area are included, the substrate having a first surface and a second surface opposing the first surface, an interconnection structure below the first surface of the substrate, photoelectric conversion elements in the pixel area of the substrate, an insulating layer on the second surface of the substrate, a grid layer on the insulating layer in the pixel area and the alignment key area, a key pattern layer between the insulating layer disposed in the alignment key area and the grid layer disposed in the alignment key area, the key pattern layer including a protruding region to correspond to the grid layer, and color filters on the insulating layer and the grid layer in the pixel area.

Image sensor

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Image sensors including conductive pixel separation structures

Image sensors including conductive pixel separation structures and methods of fabricating the same

An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.

Growing community of inventors

Seoul, South Korea

Junemo Koo