Samsung Display Co., Ltd.

Junehwan Kim

Jongwoo Park

Taeyoung Kim

Daeyoun Cho

Hyuncheol Hwang

Youngtae Choi

Hyojung Kim

Sangsub Kim

Kiju Im

Yoonho Kim

Jungmin Park

Sora Bak

Youngjoo Noh

The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.

Display apparatus and method of manufacturing the same

A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

Display device including stressors

A pixel includes: a first driving transistor and a second driving transistor; a first select transistor connected between a gate of the first driving transistor and a gate node; and a second select transistor connected between a gate of the second driving transistor and the gate node.

Pixel

A display apparatus includes a first substrate including a polymer resin, a protective layer on the first substrate, the protective layer including at least one selected from SiOCH, SiOC, SiOF, aromatic amine, diazonium tetrafluoroborate, and an aromatic diazonium compound, and a buffer layer on the protective layer, the buffer layer including a material different from a material included in the protective layer.

Growing community of inventors

Yongin-si, South Korea

Junehwan Kim