Samsung Electronics Co., Ltd.

Junehee Lee

Songkyu Kim

Yongwoon Moon

Insoo Lee

Kwangjae Woo

Sangjin Hyun

Sungho Seo

Hye-Lan Lee

Jaeyeol Song

Jinsub Park

Youngil Chang

Bonggoo Jun

In various embodiments, an electronic device comprising a communication circuit, a processor, and a memory is disclosed. The memory may store instructions that, when executed, cause the processor to transmit, to a network, a first session initiation protocol (SIP) invite message including at least one dummy value by using the communication circuit, obtain channel state information by using the communication circuit, determine a codec for performing a packet based call on the basis of channel state information, and transmit, to the network, a second SIP invite message including information of the determined codec by using the communication circuit. Various other embodiments are also possible which are known from the specification.

Method for controlling codec on basis of channel conditions and electronic device

An electronic device is provided. The electronic device includes a display, at least one communication circuit, and at least one processor configured to control the display and the at least one communication circuit. The at least one processor is configured to obtain a communication state using the at least one communication circuit during a packet based voice call, and to stop transmitting data associated with at least one of a plurality of background applications which operate in a background of an operating system (OS) of the electronic device when the communication state meets a specified first condition.

Electronic device for controlled transmission of voice data packet and method thereof

Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Junehee Lee