Samsung Electronics Co., Ltd.

June-Taeg Lee

Tae-Seok Oh

Chang-rok Moon

Byung-jun Park

Seung-hun Shin

Young-Hoon Park

Seong-Ho Oh

Sung-kwan Kim

Jung-Saeng Kim

Eun-soo Kim

Ha-Kyu Choi

Jeong-Wook Ko

Jung-Hyun Cho

Hong-Ki Kim

Bum-Suk Kim

Kee-Moon Chun

Doo-won Kwon

Hyung-Jun Kim

Sung-Won Doh

Ho-Kyu Kang

Jae-Hee Choi

Sun-Wook Heo

Jae-Ku Lee

Jeong-ki Kim

Wook-hwan Kim

Yu-Jin Ahn

A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad disposed on the lower substrate, and a lower interlayer dielectric layer on the lower plug pad. The upper device includes an upper substrate, an etch-delay structure in a lower portion of the upper substrate, an upper plug pad disposed on a bottom surface of the upper substrate, an upper interlayer dielectric layer on the upper plug pad, and a via plug configured to penetrate the upper substrate and contact the upper plug pad and the lower plug pad. The via plug includes a first portion in contact with the upper plug pad and the first etch-delay structure, and a second portion in contact with the lower plug pad.

Via structures including etch-delay structures and semiconductor devices having via plugs

An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.

Electronic device having a color filter and method of forming the same

A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.

Stack type image sensor

An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.

Electronic devices including multiple semiconductor layers

Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.

Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor

An image sensor includes an array of image sensor cells, on a substrate, and a peripheral circuit region extending adjacent the array of image sensor cells. The array of image sensor cells includes a plurality of lens elements and a plurality of color filters extending adjacent the plurality of lens elements. A plurality of photodiodes is provided in the substrate. The plurality of photodiodes are aligned to corresponding ones of the plurality of lens elements. An interconnection structure is also provided, which extends between the plurality of photodiodes and the plurality of color filters. The interconnection structure has an array of cavities therein that are aligned to corresponding ones of the plurality of photodiodes and are filled with a light guide material. The peripheral circuit region includes a metal interconnect pattern and an electrically conductive pad on the metal interconnect pattern. An electrically insulating layer extends on the electrically conductive pad. The electrically insulating layer is formed of the light guide material.

Image sensor devices having peripheral circuits therein that use light guide materials as electrical insulators

An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.

Image sensor and method of manufacturing the same

The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.

Methods of manufacturing an image sensor

Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

Image sensor with well regions of different depths and method of fabrication thereof

A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.

Growing community of inventors

Suwon-si, South Korea

June-Taeg Lee