Seoul Semiconductor Co., Ltd.

June Sik Kwak

Young Do Jong

Kwan Hyun Lee

Motonobu Takeya

Kang Nyung Lee

Jae Gil Lee

Ho Young Cha

Bong Ryeol Park

A vertical gallium nitride transistor according to an exemplary embodiment of the present invention includes a semiconductor structure including a first semiconductor layer of a first conductivity-type having a first surface and sidewalls, a second semiconductor layer of the first conductivity-type surrounding the first surface and the sidewalls of the first semiconductor layer, and a third semiconductor layer of a second conductivity-type disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer separating the first and second semiconductor layers from each other.

Vertical gallium nitride transistors and methods of fabricating the same

Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

Nitride semiconductor device and method of manufacturing the same

Growing community of inventors

Ansan-si, South Korea

June Sik Kwak