International Business Machines Corporation

June Cline

Steven M Shank

Jeffrey C Maling

Bruce Walter Porth

Dinh Dang

Mark Lagerquist

Lisa Y Ninomiya

Jessica A Trapasso

Justin Wai-chow Wong

Ronald G Meunier

Joseph P Walko

Kellie L Dutra

Robert A Calderoni

A semiconductor structure. A hard mask layer is on a top substrate surface of a semiconductor substrate. The hard mask layer includes a hard mask layer opening through which a portion of the top substrate surface is exposed to a surrounding ambient. The hard mask layer includes a pad oxide layer on the top substrate surface, a nitride layer on the pad oxide layer, a BSG (borosilicate glass) layer on top of the nitride layer, and an ARC (anti-reflective coating) layer on top of the BSG layer. A BSG side wall surface of the BSG layer is exposed to the surrounding ambient through the hard mask layer opening.

Deep trench in a semiconductor structure

A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask layer. The semiconductor substrate is exposed to the atmosphere through the hard mask layer opening. The hard mask layer opening comprises a top portion and a bottom portion, wherein the bottom portion is disposed between the top portion and the semiconductor substrate. The bottom portion has a greater lateral width than the top portion.

Deep trench formation in semiconductor device fabrication

Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated by a radio frequency (RF) generator that is connected to the electrical contacts. A variable power controller connected to the RF generator gradually increases (ramps) the power of the input signal being supplied to the chamber.

Measurement to determine plasma leakage

A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere through the hard mask layer opening, wherein the step of etching the hard mask opening includes the step of etching a bottom portion of the hard mask opening such that a side wall of the bottom portion of the hard mask opening is substantially vertical, and (c) etching a deep trench in the substrate via the hard mask opening.

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South Burlington, VT, United States of America

June Cline