Sunpower Corporation

Total Marketing Services

Maxeon Solar Pte. Ltd.

Junbo Wu

Paul Loscutoff

Michael Cudzinovic

Joseph Frederick Behnke

David D Smith

Richard Hamilton Sewell

David Aaron Randolph Barkhouse

Xiuwen Tu

Steven E Molesa

Scott Harrington

Michel Arsène Olivier Ngamo Toko

Kahn Wu

Genevieve A Solomon

Michael J Defensor

Seung Bum Rim

Michael C Johnson

Xi Zhu

Richard Sewell Hamilton

Michel Arséne Olivier Ngamo Toko

Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Metallization of solar cells

A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.

High current burn-in of solar cells

A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (HSO), acetic acid (CHCOOH), nitric acid (HNO), hydrofluoric acid (HF) or phosphoric acid (HPO). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.

Methods for wet chemistry polishing for improved low viscosity printing in solar cell fabrication

Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Enhanced adhesion of seed layer for solar cell conductive contact

Growing community of inventors

San Jose, CA, United States of America

Junbo Wu