Dupont Air Products Nanomaterials, LLC

E.i. Dupont De Nemours and Company

Imperial Chemical Industries Limited

Ici Americas, Inc.

Air Products and Chemicals, Inc.

Other

Dupont Teijin Films U.S. Limited Partnership

Invista North America S.a.r.l.

The Chemours Company Fc, LLC

Dupont Air Products Nanomaterials Lld

Junaid Ahmed Siddiqui

Robert J Small

Young H Kim

Pankaj Arora

Timothy Frederick Compton

Robin Edward Richards

Paul D Mills

Daniel Hernandez Castillo, Ii

Kimberly Gheysen Raiford

Cornell Chappell, Jr

Ajoy Zutshi

Bin Hu

Noel Stephen Brabbs

Gautam Banerjee

Karl Rakos

Karen Goodchild

Andrew Charles Street

Steven Masami Aragaki

Cornell Chappel, Jr

Stephen Derek Jenkins

Peter Jernakoff

Simon Frisk

Anton R Olek

Stephen Derek Rogers

Michael Anthony Neal

Daniel Hernandez Castillo

Patrick H Young

Graham H Hall

Tara Ranae Keefover

Rajat Kapoor

Saifi Usmani

Kimberly Raiford

Steven M Aragaki

Daniel H Ii Castillo

A proton exchange membrane and a membrane electrode assembly for an electrochemical cell such as a fuel cell are provided. A catalytically active component is disposed within the membrane electrode assembly. The catalytically active component comprises particles containing a metal oxide such as silica, metal or metalloid ions such as ions that include boron, and a catalyst. A process for increasing peroxide radical resistance in a membrane electrode is also provided that includes the introduction of the catalytically active component described into a membrane electrode assembly.

Stable proton exchange membranes and membrane electrode assemblies

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use

A catalytically active component is provided which comprises particles containing a metal oxide such as silica, metal or metalloid ions such as ions that include boron, and a catalyst. When introduced into the membrane electrode assembly of a fuel cell, the particles increase peroxide radical resistance in a membrane electrode.

Peroxide decomposition catalyst particles

A chemical-mechanical planarization composition containing surface-modified abrasive particles such as silica where at least a portion of the surface of the particles has bound thereto a surface-modifying aluminum-containing stabilizer and fluoride that is used to polish semiconductor substrates. The use of a CMP slurry containing surface-modifying aluminum-containing stabilizer and fluoride bound to a silica abrasive provides high metal polishing rates relative to the removal rate of a dielectric.

Fluoride-modified silica sols for chemical mechanical planarization

A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.

Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers

A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

Method for chemical mechanical planarization of chalcogenide materials

A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use

A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.

Free radical-forming activator attached to solid and used to enhance CMP formulations

A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer is B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.

Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization

A low solids-content slurry for polishing (e.g., chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketoxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Chemical-mechanical planarization composition having ketooxime compounds and associated method for use

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Richmond, VA, United States of America

Junaid Ahmed Siddiqui