Seagate Technology Incorporated

Rosemount Aerospace Limited

Jun Zheng

Dadi Setiadi

Haiwen Xi

Yiran Chen

Xiaobin Wang

David Patrick Potasek

Yuan Yan

A microelectromechanical system (MEMS) strain gauge pressure sensor includes a top wafer stack having a top surface and a first cavity that is configured to receive a first fluid at a first pressure, a backing wafer having a bottom surface opposite the top surface of the top wafer stack; a diaphragm wafer positioned between the top wafer stack and the backing wafer and having a second cavity that is configured to receive a second fluid at a second pressure, and a pedestal connected laterally to the top wafer stack, the backing wafer, and the diaphragm wafer. The diaphragm wafer includes a diaphragm extending between the first cavity and the second cavity, and a resistor positioned on the diaphragm. The MEMS strain gauge pressure sensor has a central axis such that the MEMS strain gauge pressure sensor has mechanical symmetries about the central axis.

MEMS strain gauge pressure sensor with mechanical symmetries

A differential MEMS pressure sensor includes a topping wafer with a top side and a bottom side, a diaphragm wafer having a top side connected to the bottom side of the topping wafer and a bottom side, and a backing wafer having a top side connected to the bottom side of the diaphragm wafer and a bottom side. The topping wafer includes a first cavity formed in the bottom side of the topping wafer. The diaphragm wafer includes a diaphragm, a second cavity formed in the bottom side of the diaphragm wafer underneath the diaphragm, an outer portion surrounding the diaphragm, and a trench formed in the top side of the diaphragm wafer and positioned in the outer portion surrounding the diaphragm.

Differential pressure sensor

A method of fabricating a capacitive micromechanical electrical system (MEMS) pressure sensor includes the steps of forming a backing wafer, forming a diaphragm wafer that includes a diaphragm configured to deflect from an applied force and a pressure cavity configured to produce on the diaphragm the applied force which is indicative of a system pressure; fusing the diaphragm wafer to the backing wafer thereby forming a base wafer, forming a top wafer, joining the top wafer to the base wafer, thereby forming a detector wafer. The diaphragm defines a first capacitor surface and the top wafer defines a second capacitor surface. A void separates the second capacitor surface from the first capacitor surface by a separation distance which is a capacitor gap. A capacitive MEMS pressure sensor is also disclosed.

Capacitive MEMS pressure sensor and method of manufacture

A MEMS pressure sensor includes a first plate with a hole on a diaphragm bonded to the first plate around its rim with the diaphragm positioned over the hole. An isolation frame is bonded to the diaphragm and a second plate with a pillar is bonded to the isolation frame around its rim to form a cavity such that the end of the pillar in the cavity is proximate a surface of the diaphragm. The diaphragm and second plate form a capacitive sensor which changes output upon deflection of the diaphragm relative to the second plate.

High temperature capacitive MEMS pressure sensor

A wafer article includes a substrate, two or more hydrophilic areas disposed on the substrate, hydrophobic areas surrounding the hydrophilic areas, and a eutectic bonding material disposed on the substrate. A wafer apparatus including two wafers having complimentary hydrophilic regions and eutectic bonding material is disclosed and a method of forming a bonded wafer articles is disclosed.

Self-aligned wafer bonding

Methods of forming non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.

Methods of forming non-volatile memory

Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position.

Domain wall movement on magnetic strip tracks

A resistive memory cell that includes a metal-polymer bi-layer proximate a CMOS gate. The memory cell has a substrate having a source contact connected to a source line and a drain contact connected to a drain line, a CMOS gate proximate the substrate electrically connecting the source contact and the drain contact, the bi-layer adjacent the CMOS gate, the bi-layer comprising a thin metal layer and a polymer layer, and a word line connected to the bi-layer.

Non-volatile memory with metal-polymer bi-layer

Non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.

Growing community of inventors

Edina, MN, United States of America

Jun Zheng