Applied Materials, Inc.

Applied Material, Inc.

Jun Zhao

Talex Sajoto

Charles N Dornfest

Leonid Selyutin

Stefan A Wolff

Lee Luo

Rick J Roberts

Alex Schreiber

Vincent W Ku

Frank P Chang

Mei Yin Chang

Ashok K Sinha

Alexandros T Demos

Xiao Liang Jin

Michal Danek

Avi Tepman

Timothy Weidman

Farhad K Moghadam

Hiroshi Nishizato

Po Tang

Visweswaren Sivaramakrishnan

Michael Santiago Cox

Tom K Cho

Zhenjiang Cui

Xin Sheng Guo

David H Quach

Xiaoliang Jin

Jia-Xiang Wang

John M White

Dan Maydan

Sasson Roger Somekh

Kevin P Fairbairn

Hari K Ponnekanti

Boris Fishkin

Yaxin Wang

Helen R Armer

Christopher Wade

Richard Palicka

Harold H Mortensen

Visweswaren Sivaramakrishnam

Elaine Pao

Ichiro Yokoyama

Kenneth S Collins

Michael Robert Rice

Li-Qun Xia

Liang-Yuh Chen

Joseph Yudovsky

Pravin K Narwankar

William R Livesay

Arnold Kholodenko

Alain Duboust

Maitreyee Mahajani

Anand Gupta

Steve G Ghanayem

Semyon Sherstinsky

Claes H Bjorkman

Patrick D Kinney

Daniel A Carl

Jianmin Qiao

Paul F Smith

Eller Y Juco

Xianzhi Tao

Khaled A Elsheref

Tai T Ngo

Shih-Hung Li

Ravi Jallepally

William Nixon Taylor, Jr

Calvin R Augason

Leonel Arturo Zuniga

Kenneth D Smyth

Atsushi Tabata

Thomas Miu

Laszlo Szalai

Chris Wang

Robert Bendler

Terry Francis

Gerald McNutt

Li-Quan Xia

Scott C Woods

An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.

Apparatus and method for heating substrates

In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

Methods and apparatus for transferring conductive pieces during semiconductor device fabrication

One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices

One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

Electron beam treatment apparatus

One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) an array of lamps that output radiation; (b) a support mechanism adapted to support a substrate at a treatment position above the lamps; and (c) a lamp heat shield, disposed above the array, having a radiation absorption portion adapted to absorb radiation from at least a portion of the array, and a radiation reflection portion adapted to reflect radiation from at least a portion of the array towards the substrate when disposed at the treatment position.

A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; exposing the layer of spin-on glass material to a solvent; curing the layer of spin-on glass material; and depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques

One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices

An anti-stratification-delivery system comprises a multi-zone-refrigeration unit having at least first and second zone temperature controllers, the first and second zone temperature controllers are capable of being set at different temperatures to establish a temperature gradient in a liquid, the temperature gradient being sufficient to cause natural-thermal convention within the liquid to stir a colloid suspended in the liquid to an approximately uniform-colloidal suspension; and a delivery system configured to dispense the approximately uniform-colloidal suspension.

Anti-stratification-solution delivery system for spin-on dielectrics

A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

Multistep cure technique for spin-on-glass films

An electron beam apparatus that includes a vacuum chamber, a large-area cathode disposed in the vacuum chamber, and a first power supply connected to the cathode. The first power supply is configured to apply a negative voltage to the cathode sufficient to cause the cathode to emit electrons toward a substrate disposed in the vacuum chamber. The electron beam apparatus further includes an anode positioned between the large-area cathode and the substrate. The anode is made from aluminum. The electron beam apparatus further includes a second power supply connected to the anode, wherein the second power supply is configured to apply a voltage to the anode that is positive relative to the voltage applied to the cathode.

Large area source for uniform electron beam generation

Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.

Apparatus and method for fast-cycle atomic layer deposition

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces &ldquo;flash&rdquo; sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e.g., about 150&deg; C. to about 300&deg; C., to prevent decomposition and/or condensation of vaporized material on the chamber and related gas flow surfaces.

High temperature filter for CVD apparatus

The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.

High temperature ceramic heater assembly with RF capability

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Cupertino, CA, United States of America

Jun Zhao