Samsung Electronics Co., Ltd.

Jun Young Oh

Seung Hwan Kim

Jongho Park

Dong-Ju Jang

Sangsoo Kim

Kyong Hwan Koh

Yong Kwan Lee

Jong Ho Lee

Un-Byoung Kang

Chungsun Lee

Jong Ho Park

Hyun Ki Kim

Yongkwan Lee

Jungjoo Kim

Sun Chul Kim

Sang Soo Kim

Seok Geun Ahn

The semiconductor device may include a substrate, a first insulating layer on a bottom surface of the substrate, an interconnection structure in the first insulating layer, a second insulating layer on a bottom surface of the first insulating layer, and a plurality of lower pads provided in the second insulating layer. Each lower pad may be provided such that a width of a top surface thereof is smaller than a width of a bottom surface thereof. The lower pads may include first, second, and third lower pads. In a plan view, the first and third lower pads may be adjacent to center and edge portions of the substrate, respectively, and the second lower pad may be disposed therebetween. A width of a bottom surface of the second lower pad may be smaller than that of the first lower pad and may be larger than that of the third lower pad.

Semiconductor device including lower pads having different widths and semiconductor package including the same

A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

Semiconductor package and a method of fabricating the same

The present disclosure provides a magazine supporting equipment for supporting a magazine with multiple input ports. The magazine supporting equipment comprises a contact plate, a first sidewall plate, and a second sidewall plate. The contact plate is in contact with the magazine. The first sidewall plate extends vertically from one end of the contact plate. The second sidewall plate parallel is to the first sidewall plate and extends vertically from one end to the other end of the contact plate. The first sidewall plate extends along at least a part of a first sidewall of the magazine. The second sidewall plate extends along at least a part of a second sidewall of the magazine. The first sidewall plate and the second sidewall plate include control openings through which gas flows in and out.

Magazine supporting equipment and semiconductor manufacturing apparatus including the same

A semiconductor package includes a first substrate, a first semiconductor chip disposed on the first substrate, a second substrate disposed on the first semiconductor chip, a second semiconductor chip disposed on the second substrate, and a mold layer disposed between the first substrate and the second substrate. The second substrate includes a recess formed at an edge, the mold layer fills the recess, and the recess protrudes concavely inward from the edge of the second substrate toward a center of the second substrate.

Semiconductor package

A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.

Growing community of inventors

Seoul, South Korea

Jun Young Oh