Hynix Semiconductor Inc.

Jun-Yeol Cho

Young-Wook Lee

Won-Joon Choi

Beom-Yong Kim

Moon-Sig Joo

Ki-Hong Lee

A 3D nonvolatile memory device includes: a plurality of channel structures including a plurality of channel layers and interlayer dielectric layers, which are alternately stacked, and extended in a first direction; a plurality of word lines extended in a second direction at least substantially perpendicular to the first direction; a plurality of row select lines connected to the plurality of channel layers, respectively, and extended in the second direction; and a plurality of column select lines connected to the plurality of channel structures, respectively, and extended in the first direction.

Growing community of inventors

Gyeonggi-do, South Korea

Jun-Yeol Cho