Google Inc.

Lumentum Operations LLC

Jun Yang

Matthew Glenn Peters

Guowei Zhao

Ajit Vijay Barve

Eric R Hegblom

David Roy Schairer

Vincent Yanton Mo

Benjamin Kesler

Mark Spates, Iv

Jesse Shieh

Shoumen Saha

Jon Snitow

Barnaby John James

Kevin Gibbs

Lei Zhong

Jeffrey Nelson

Mark Edward Stahl

Shyam Sheth

Amy Lynn Baldwin

Jonathan S Sergent

Mark B Stahl

Manit Limlamai

Kyle Lund

Matthew Swartwout

Gaurav Nolkha

Stephen Lanham

Kevin A Gibbs

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode

In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.

Dilute nitride long-wavelength emitter with improved performance over temperature

A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.

Methods for forming a vertical cavity surface emitting laser device

Various implementations relate to generating, locally at an assistant client device, specific control commands that, when transmitted to a corresponding smart device, are directly interpretable by the corresponding smart device to effectuate a state change at the corresponding smart device, or at a corresponding additional smart device directly controlled by the corresponding smart device. Various implementations additionally or alternatively relate to utilizing local assistant client devices in discovering, provisioning, and/or registering smart devices for an account of a user.

Control and/or registration of smart devices, locally by an assistant client device

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

Vertical-cavity surface-emitting laser with a tunnel junction

Example aspects of the present disclosure are directed to processing voice commands or utterances. For instance, data indicative of a voice utterance can be received. A device topology representation can be accessed. The device topology representation can define a plurality of smart devices associated with one or more structures. The device topology representation can further define a location of each of the plurality of devices within the associated structures. A transcription of the voice utterance can be determined based at least in part on the device topology representation. One or more selected devices and one or more actions to be performed by the one or more selected devices can be determined based at least in part on the determined transcription and the device topology representation.

Processing voice commands based on device topology

A computer-implemented system and method to distribute a content document with security, customization, and scalability is provided. One or more servers provides a customizable content document associated with a first entity, enables a second entity to specify content to be included for users associated with the entity in the customizable content document, and delivers the customized content document incorporating the specified content in a secure manner to users associated with the second entity.

Configuring a content document for users and user groups

The subject matter of this specification can be embodied in, among other things, a method that includes receiving, from a web browser, a request for a token that authorizes a third party server to access a user's data stored by a content provider server. The token specifies a first scope of authorization that indicates a portion of the user's data that the third party server is permitted to access. The method also includes determining if the first scope is substantially the same as or a subset of a second scope of a previously issued token and transmitting the token in response to the received request if the first scope is determined to be substantially the same as or a subset of the second scope.

Web authorization with reduced user interaction

The subject matter of this specification can be embodied in, among other things, a method that includes generating, within a web-accessible document, a parent container document associated with a first Internet domain and one or more child container documents within the parent container document and associated with a second Internet domain. The method also includes receiving, by the parent container document, information requested from a server associated with the first Internet domain, and communicating the information from the first Internet domain to the second Internet domain using the parent container document associated with the first Internet domain to transmit the information to the one or more child container documents associated with the second Internet domain.

Cross-domain communication

Growing community of inventors

Cupertino, CA, United States of America

Jun Yang