Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Shanghai Huali Integrated Circuit Corporation

Current Lighting Solutions, LLC

Huawei Technologies Co., Limited

Nvidia Corporation

Ge Lighting Solutions LLC

Semiconductor Manufacturing (shanghai) International Corporation

General Electric Company

Tongji University

Baoshan Iron & Steel Co., Ltd.

Nio Technology (anhui) Co., Ltd.

Hli Solutions, Inc.

Bostik Sa

Semiconductor Manufacturing International Corp.

Jun Yang

Shuyi Qin

Min Fang

Qi Long

Hua Chen

Hwong-Kwo Lin

Jisheng Sun

Zhu Mao

Sheng Jiang

Zhongshan Hong

Tingting Wang

Edward John Thomas

Xiao Yang

Honghao Wu

Yong Li

Zhiyuan Hou

Ju Shen

Cheng Qing Wei

Jian Hua Ju

Fei Zhou

Tao Wang

Lei Wang

Stephen Felix

Li Qin Shen

Pengju Kang

Ge Yang

Spencer Montgomery Gold

Jing Guo

Eric H Voelkel

Raghu Ramaiah

Jianhua Ju

Tong Zhao

Zhenrong Wei

Ronghui Zhou

Andreas J Gotterba

Yanfeng Liang

Lile Liu

Qing Duan

Liang Shan

Han Zhang

Haiyan Gong

Tatchi Teddy Yang

Karthik Natarajan

Xiangming Shen

Shaoping Hu

Jason Golbus

Chunlang Pu

Haobin Zhang

Guangming Tian

Zhenye Jiang

Zili Cai

Heng Pan

Dejun Su

Runjie Lin

Jianbo Ye

Beibei Ren

Mingming Pan

Qiquan He

Xiao Na Wang

Zhenyu Gao

Sibo Huang

Zhiling Zhou

Chunhua Zhu

Liwei Yu

Chengqing Wei

Minghua Shen

Hongbing Wang

Huaqun Zhu

Xuechang You

Guiling Zhou

Xiao Chen

Haohan Liu

Yingying Gao

Xinheng Yuan

Support assemblies for supporting a light-emitting diode (LED) lamp, which may be a heavy LED lamp. In an embodiment, a support assembly includes a frame having a ring and configured to be detachably connected to a front cover of an LED lamp. The support assembly also includes a plurality of position modules uniformly distributed around the periphery of the ring, wherein the position modules may cover at least a portion of the front cover of the LED lamp, and at least one support leg attached to the frame. The at least one support leg supports the frame and an inserted LED lamp on at least one support surface, and at least one support leg is slidably coupled to the frame and adjustable to provide a support length between the frame and the at least one support surface.

Support accessory and lighting system

The present application discloses a method for manufacturing fin field effect transistors, comprising: step 1: performing first time etching to form top portions of fins, each of the top portions is divided into a first section and a second section; step 2: forming sacrificial sidewalls on the side surfaces of the second section but not on the side surfaces of the first section; step 3: forming a doped dielectric layer to coat the side surfaces of the first section; step 4: performing a dopant drive process to diffuse dopants of the doped dielectric layer into the first section; step 5: removing the doped dielectric layer and the sacrificial sidewalls; step 6: performing second time etching to form bottom portions of the fins; and step 7: forming a dielectric isolation layer between adjacent fins.

Method for manufacturing fin field effect transistor

A method for forming a FinFET super well, forming a deep well and a well region in a silicon substrate, followed by formation the fin structure under a hard mask layer; etching a first portion of a fin, performing the first ion implantation for adjusting the threshold voltage at a first height of the fin, the hard mask layer protects the fin structures from ion implantation damages to the fin top; etching a second portion of the fin, performing the second anti-punch through ion implantation at the second height, and in annealing, the implanted ions laterally diffuse into the fin. Finally, the deep well, the well region, the first ion implantation layer for adjusting the threshold voltage, and the second ion implantation layer for anti-punch through jointly form the FinFET super well, which increases the carrier mobility, thereby improving the device performance.

Method for forming FinFET super well

A Helmholtz resonator and a low-frequency broadband sound-absorbing and noise-reducing structure based on the same is provided. The Helmholtz resonator includes a Helmholtz resonator body, at least one embedded tube is disposed in the Helmholtz resonator body, and an inner surface of an opening of the Helmholtz resonator body wraps around an outer side of one of the embedded tubes; and all the embedded tubes are not in contact with each other. The low-frequency broadband sound-absorbing and noise-reducing structure includes a rigid framework, and at least two Helmholtz resonators are disposed in parallel in the framework. The Helmholtz resonator not only achieves a better low-frequency broadband sound absorption and noise reduction effect, but also reduces a thickness of the Helmholtz resonator more effectively. The low-frequency broadband sound-absorbing and noise-reducing structure enhances a sound absorption effect of each weak sound-absorbing Helmholtz resonator, and further achieves more efficient sound absorption.

Helmholtz resonator and low-frequency broadband sound-absorbing and noise-reducing structure based on the same

This application provides a cell selection method, a cell reselection method, and a chip, to improve user experience. The cell selection method includes: A terminal device searches for a first candidate cell, and receives a system message of the first candidate cell, where the system message includes parameter information of the first candidate cell and bandwidth information of the first candidate cell, and the bandwidth information is used to indicate a bandwidth of the first candidate cell. The terminal device determines a cell selection reception level value Srxlev and a cell selection quality value Squal of the first candidate cell based on cell measurement values and the parameter information of the first candidate cell, and determines that Srxlev>0 and Squal>0. When the bandwidth of the first candidate cell is greater than a preset threshold, the terminal device camps on the first candidate cell.

Cell selection method, cell reselection method, and chip

The present disclosure describes a fin field-effect transistor (FinFET) standard cell with double self-aligned contacts. The FinFET standard cell with double self-aligned contacts includes a self-aligned gate contact spanning over a diffusion bonding hole and a self-aligned diffusion bonding hole contact spanning over a gate, and the FinFET device further includes a cap layer between the two self-aligned contacts so as to separate the two self-aligned contacts, thereby further reducing the size of the active fin or a dummy fin so as to further reduce the area of the FinFET standard cell, to prevent a bridge connection between adjacent M0 structures like the M0A and M0P, thereby improving yield of manufacturing.

FinFET standard cell with double self-aligned contacts and method therefor

The present application discloses a method for manufacturing a fin field effect transistor, comprising: step: forming fins; step, forming first gate structures; and step, forming source and drain areas, comprising: step: forming a second hard mask layer; step: opening a formation area of FinFET, and performing the first time etching on the second hard mask layer; step: performing the second time etching to form first grooves in the fins, wherein the second time etching vertically and horizontally etches the isolation dielectric layer, when the second groove is formed next to the exposed surfaces of the isolation dielectric layer, the exposed surfaces of the fins and the first polysilicon gate, as the result, the second groove forms a bridge path; step: forming a sacrificial sidewall to fully fill the bridge path; and step: filling the first groove with an epitaxial layer.

The disclosure relates to a life prediction system for a fan of a lamp. The system comprises a fan signal detecting module to detect at least one working parameter of the fan; and a micro control unit to receive the working current signal, the environment temperature signal and the working rotation speed signal of the fan. The detecting module comprises a current detecting unit to detect a working current of the fan and output a working current signal; a temperature detecting unit to detect a working environment temperature of the fan and output an environment temperature signal; and a rotation speed detecting unit to detect and output a working rotation speed signal of the fan. The micro control unit calculates a predicted residual life of the fan based on the received working current signal, the environment temperature signal, the working rotation speed signal, through the life model of the fan.

Lamp, lamp fan life predicting system and method thereof

A network search method includes receiving, by a terminal device, a user operation, where the user operation requests communication with a network device by using a 5Generation (5G) access technology; and when a cell with which the terminal device currently registers is a non-allowed area, searching for a second cell, where the second cell is an allowed area, so that the terminal device communicates with the network device in the second cell by using the 5G access technology. Therefore, when actively initiating a service, the terminal device in the non-allowed area may actively search for a cell that is an allowed area, to communicate with the network device by using the 5G access technology.

Network search method and terminal device

The invention relates to the technical field of air outflow, and aims to solve the problem whereby louvers in an air outflow device in a current vehicle needs to be manually turned to adjust an air outflow direction. The invention provides an air outflow device. An opening/closing member and an air distribution member are rotatably disposed in an air inflow section, an outlet of a first air outflow section and an outlet of a second air outflow section are respectively provided with a first louver structure and a second louver structure, and a first driving member and a second driving member are disposed outside an air channel. The first driving member is capable of driving the opening/closing member to open/close the air inflow section so as to connect/disconnect the air inflow section, and is capable of driving the air distribution member to rotate so as to adjust an air outflow amount and a longitudinal air outflow direction. The second driving member is capable of driving the first louver structure and the second louver structure to swing together so as to adjust a transverse air outflow direction. According to the invention, the air outflow direction is adjusted without the need for manually turning the louvers, so that the air outflow device is convenient to use.

Air outflow device, console and vehicle

A FinFET is provided. The FinFET includes a substrate including an NMOS (N-type metal-oxide-semiconductor) region; a plurality of fins formed on the substrate; an isolation layer formed between adjacent fins of the plurality of fins and on the substrate; a gate structure across a length portion of the fin and covering a portion of each of a top surface and sidewalls of the fin; and an in-situ doped epitaxial layer formed on each of the etched fin on both sides of the gate structure. The doping ions in the in-situ doped epitaxial layer are N-type ions.

FinFET and fabrication method thereof

A support accessory is provided for an LED lamp, and the support accessory includes a frame and a supporting leg. The frame is configured to be detachably coupled to the LED lamp, and the supporting leg is configured for supporting the frame on at least one certain support surface when the LED lamp is installed. Wherein, in a first state, the supporting leg is fixed to the frame, and in a second state, the supporting leg is slidably coupled to the frame and can slide relative to the frame to adjust length of the supporting leg between the frame and the at least one certain support surface.

Support assembly and illumination system

A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, an interlayer dielectric layer, multiple trenches in the interlayer dielectric layer including first, second, third trenches for forming respective gate structures of first, second, and third transistors, forming an interface layer on the bottom of the trenches; forming a high-k dielectric layer on the interface layer and sidewalls of the trenches; forming a first PMOS work function adjustment layer on the high-k dielectric layer of the third trench; forming a second PMOS work function adjustment layer in the trenches after forming the first PMOS work function adjustment layer; forming an NMOS work function layer in the trenches after forming the second PMOS work function adjustment layer; and forming a barrier layer in the trenches after forming the NMOS work function layer and a metal gate layer on the barrier layer.

Method and device for finFET SRAM

A caller identification display method includes a terminal device sending a first request to a server of a first application, where the first request is used by the terminal device to subscribe to a first service. After receiving the request sent by the terminal device, the server of the first application sends a first response to the terminal device. The server of the first application sends a first number to the terminal device. The terminal device obtains an association relationship between the first number and the first application. When the terminal device makes a call or receives an incoming call, the terminal device displays a first call interface, where the first call interface includes prompt information, and where the prompt information includes the association relationship between the first number and the first application.

Caller identification display method based on application, and terminal device

Growing community of inventors

Shanghai, China

Jun Yang