Tokyo Electron Limited

Jun Yamashima

Atsushi Sawachi

Naotsugu Hoshi

Norikazu Sasaki

Shinichiro Hayasaka

Yoshiyasu Sato

Hiroshi Fujii

Junichi Akiba

Kenichi Nogami

Naoya Jami

Toshihiro Tsuruta

A gas supply system includes a first device to a third device. A plurality of integral units of the first device is configured to select one or more gases from one or more gas sources and supply the selected gases. The second device is configured to distribute plural gases from the integral units and supply the distributed gases while controlling flow rates of the distributed gases. The third device is configured to exhaust the gases within the gas supply system to a gas exhaust device.

Gas supply system, plasma processing apparatus, and operation method for plasma processing apparatus

In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. The target pressure of a chamber is determined according to the set flow rate. Until the pressure of the chamber reaches the target pressure after gas is started to be output from the flow rate controller to the chamber at an output flow rate according to the set flow rate and a pressure controller provided between the chamber and an exhaust apparatus is closed, the pressure of the chamber is measured by the selected pressure sensor. The output flow rate of the flow rate controller is determined from a rate of rise of the pressure of the chamber.

Method of determining output flow rate of gas output by flow rate controller of substrate processing apparatus

Growing community of inventors

Miyagi, Japan

Jun Yamashima