Konica-minolta Holdings, Inc.

Minolta Company, Ltd.

Jun Yamada

Masakazu Okada

Mitsuyoshi Miyai

Tomoo Izumi

Kiyofumi Hashimoto

Yuya Hirao

Naoki Masazumi

Keiichi Furukawa

Seiichi Tsuzuki

Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps of: forming two underlying electrodes on an underlying layer; forming a partition layer on the surface of the underlying layer containing the two underlying electrodes so as to surround an area where the source electrode and the drain electrode are to be formed; forming the source electrode and the drain electrode by a plating method on the surfaces of the two underlying electrodes, which are surrounded by the partition layer; and applying semiconductor solution, in which a semiconductor material is dissolved or dispersed, to the area surrounded by the partition layer so that a semiconductor film is formed in the area.

Thin film transistor and method for manufacturing the same

Provided are an organic TFT manufacturing method whereby flow of ink into an unnecessary area can be suppressed and excellent characteristics and high reliability can be obtained, and an organic TFT. The organic TFT manufacturing method comprises a step of providing a source electrode and a drain electrode on a base member; a step of providing a bank layer, which has an opening on a channel between the source electrode and the drain electrode, an opening on a predetermined area of the base member, and a groove or grooves around the opening on the predetermined area, which surround the opening on the predetermined area; and a step of supplying an organic semiconductor solution to the opening of the bank layer formed on the channel to form an organic semiconductor layer.

Organic thin film transistor manufacturing method and organic thin film transistor

A method for producing an organic thin film transistor having, on a substrate, a source electrode, a gate electrode, a drain electrode, an insulating layer and an organic semiconductor layer. The method has a step of forming the source electrode and the drain electrode such that one of the source electrode and the drain electrode which is an inner-located electrode has an outer circumference which is circular or polygonal and that the other electrode which is an outer-located electrode has an inner circumference facing the outer circumference of the inner-located electrode, the inner circumference being of a shape which is substantially concentric with the outer circumference of the inner-located electrode. The method also has a step of forming the organic semiconductor layer for connecting the source electrode and the drain electrode to each other by a process of dropping an organic semiconductor material.

Method for producing an organic thin film transistor and an organic thin film transistor produced by the method

Disclosed is a method of forming an organic semiconductor layer comprising the steps of preparing a substrate having a groove formed on the surface, applying, to the surface of the substrate, a droplet of an organic semiconductor liquid in which an organic semiconductor material is dissolved or dispersed in a solvent, and drying the droplet to form the organic semiconductor layer, wherein the droplet is applied to a position of the substrate where a part of the circumference of the droplet is introduced into the groove.

Method of forming organic semiconductor layer and method of manufacturing organic thin film transistor

A method of manufacturing a low-cost thin film transistor of minimized variations in performances, as well as the thin film transistor produced thereby. A thin film transistor manufacturing method including the steps of: forming a gate electrode on a substrate; forming a gate insulation layer on the gate electrode; forming a semiconductor layer by coating the gate insulation layer with a semiconductor material; forming a repellent layer having an electrode material-repellent characteristic on the semiconductor layer; applying light from the surface of the substrate where there is no gate electrode, thereby removing the semiconductor layer and the repellent layer by sublimation, except for the portion protected against light by the gate electrode; and dropping the fluid electrode material on the repellent layer remaining on the substrate so that the fluid electrode material is separated by the repellent layer, whereby the source electrode and the drain electrode are formed.

Thin film transistor and method of manufacturing thin film transistor

The present invention provides a film forming method of a uniform semiconductor layer having a large area at a low cost and equipment to form said semiconductor layer, by blowing gas against a coated layer to shorten the drying time and to decrease uneven drying. A film forming method of a semiconductor layer characterized by being provided, after a process to coat a semiconductor material containing a solvent on a substrate, with a process to blow gas against a coated layer of a semiconductor layer containing said solvent to evaporate the solvent.

Film formation method and manufacturing equipment for forming semiconductor layer

A liquid crystal display apparatus which have a circular polarizer and a liquid crystal display in a stack. The liquid crystal display has a chilral nematic liquid crystal layer between substrates, and on the mutually opposite sides of the substrates, electrodes and aligning layers are formed. The liquid crystal switches between a planar alignment state and a focal-conic alignment state depending on the voltage applied thereto through the electrodes. In a planar state, light reflected by the electrodes is absorbed by the circular polarizer, and a black display is made. In a focal-conic state, light reflected by the electrodes passes through the circular polarizer, and a white display is made. The liquid crystal is driven by a chain of voltage pulses including a reset step of resetting the liquid crystal to a homeotropic state, a selection step of selecting the alignment state of the liquid crystal under zero-volt application and an evolution step of causing the liquid crystal to evolve to the selected alignment state.

Liquid crystal display apparatus

A liquid crystal light modulation element is provided that includes a liquid crystal layer held between a pair of substrates. The liquid crystal layer includes a liquid crystal material that exhibits a cholesteric phase and has a plurality of domains. The liquid crystal layer includes regions where the helical axes of the liquid crystal molecules in a focal conic state extend in regular directions within a plane that is substantially parallel to the surface substrate.

LCD element including regions where helical axes of LC molecules of neighboring domains in focalconic state extend in same direction

A liquid crystal light modulation element includes a liquid crystal layer between first and second substrates. The liquid crystal layer includes a liquid crystal material exhibiting a cholesteric phase having a peak selective reflection wavelength in a visible wavelength range. When the liquid crystal layer is in the selective reflection state, it has pixel regions near the first and second substrates. The liquid crystal domains in the pixel regions near the first substrate are in a mixed state of polydomain and monodomain states. The liquid crystal domains in the pixel regions near the first substrate have a first ratio between the liquid crystal domains taking the polydomain and monodomain states. The liquid crystal domains in the pixel regions near the second substrate have a second ratio between the liquid crystal domains taking the polydomain and monodomain states. The first ratio is different from the second ratio.

Growing community of inventors

Ibaraki, Japan

Jun Yamada