Shin-etsu Handotai Co., Ltd.

Nanoteco Corporation

Jun-ya Ishizaki

Nobuhiko Noto

Masato Yamada

Shinji Nozaki

Kazunori Hagimoto

Hiroshi Morisaki

Kazuo Uchida

Shunichi Ikeda

Jun Ikeda

Yukari Suzuki

A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

Light emitting device and method of fabricating the same

A p-n junction interfaceis formed between an n-type ZnTeO(0.5&#x2266;x&#x2266;1) layerand a p-type ZnTeO(0&#x2266;x&#x3c;0.5) layer, and the n-type ZnTeO layerand/or p-type ZnTeO layerare formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.

Method of fabricating a Zn-base semiconductor light emitting device

A light emitting devicehas formed therein a light emitting layer sectionbased on a double heterostructure in which a p-type cladding layer, an active layerand an n-type cladding layer, individually composed of a MgZnO (0&#x2266;a&#x2266;1) type oxide, are stacked in this order, and uses a face on the n-type cladding layer side as a light extraction surface. The device also has, as being provided on the main surface on the light extraction surface side of the n-type cladding layer, an n-type low resistivity layercomposed of a MgZnO type oxide, and having a content of an n-type dopant larger than that in the n-type cladding layer. There is thus provided a light emitting device of MgZnO-type oxide base, excellent in the light extraction efficiency, having the light emitting layer section composed of a MgZnO-type oxide, and a high conductivity MgZnO-base compound semiconductor layer disposed on the light extraction surface side.

Light-emitting device and method of fabricating the same

On the surface of a substrate, a precursory buffer layer' composed of an In-base compound or a Zn-base compound, not contained in the substrate, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer&#x2032; is annealed for re-crystallization to thereby convert it into a buffer layer. This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.

Zn-base semiconductor light-emitting device and method for manufacturing same

A light emitting devicehas a light emitting layer portionwhich comprises an active layercomposed of an MgZnO-type oxide semiconductor, a p-type cladding layeragain composed of an MgZnO-type oxide semiconductor, and an n-type cladding layer. On the p-type cladding layerof the light emitting layer portion, a light extraction layeris configured using an oxide, where the light extraction layerhas a refractive index at a dominant emission wavelength of light extracted from the active layersmaller than that of the cladding layers. This makes it possible to efficiently extract the light emitted from the light emitting layer portionto the external of the light emitting device. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.

In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

In a MgZnO layer composing an active layer or a p-type cladding layer, a p-type oxide layerwhich is different from MgZnO-type oxide and has a p-type conductivity is disposed. Because a function of absorbing and compensating electrons in this configuration is owned by the p-type oxide layer localized in the MgZnO layer, it is no more necessary to add a large amount of dopant, and this is successful in obtaining a p-type or i-type MgZnO-type oxide having a desirable quality, and in realizing a high-emission-efficiency, light-emitting device capable of emitting ultraviolet or blue light. Adoption of a junction structure, in which at least either of the p-type cladding layer and the n-type cladding layer comprises a first crystal layer, and a second crystal layer which is hetero-bonded to the first crystal layer, and on the side thereof opposite to the active layer and has a band gap energy smaller than that of the first crystal layer, is successful in effectively injecting the carrier to the active layer, and consequently in raising the emission efficiency.

Light emitting device and method for fabricating the same

When a p-type MgZnO-type layer is grown based on a metal organic vapor-phase epitaxy process, the p-type MgZnO-type layer is annealed in an oxygen-containing atmosphere during and/or after completion of the growth of the p-type MgZnO-type layer. In addition, a vapor-phase epitaxy process of a semiconductor layer is proceed while irradiating ultraviolet light to the surface of a substrate to be grown and source gasses. In addition, when a MgZnO-type buffer layer that is oriented so as to align the c-axis thereof to a thickness-wise direction is formed by an atomic layer epitaxy process, a metal monoatomic layer is grown at first. In addition, a ZnO-base semiconductor active layer is formed by using a semiconductor material mainly composed of ZnO containing Se or Te. A light emitting device is formed by using these techniques.

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Annaka, Japan

Jun-ya Ishizaki