Taiwan Semiconductor Manufacturing Comp. Ltd.

Nanjing Semidrive Technology Ltd.

Jun Xie

Ching-Wei Wu

Ming-Hung Chang

Luping Kong

Lihang Zhang

A memory device is provided and includes a memory array, first to second latch circuits and a gating circuit. Read and write operations are triggered by first and second edges of an internal clock signal respectively. The first latch circuit generates a first output signal in response to an input signal and a first latch clock signal, a first edge of the first latch clock signal generated based on the first edge of the internal clock signal. The second latch circuit generates a second output signal in response to the first output signal and a second latch clock signal, a first edge of the second latch clock signal being between first and second edges of the first latch clock signal. The gating circuit generates, in response to the second output signal and a gating clock generated, a third output signal to the memory array.

Memory structure with optimized latch clock design

An error correction code circuit includes a first error correction code circuit configured to generate correction data and a first correction check bit according to received source data and a source check bit corresponding to the received source data, a second error correction code circuit connected to the first error correction code circuit, and configured to, according to the correction data and at least one of the first correction check bit or the source check bit, determine whether the correction data is wrong and generate a second correction check bit, and a comparison circuit connected between the first error correction code circuit and the second error correction code circuit, and configured to compare the first correction check bit with the second correction check bit and determine whether the first correction check bit is wrong.

Growing community of inventors

Nanjing, China

Jun Xie