Linkdata New Energy Co., Ltd.

United Semiconductor (xiamen) Co., Ltd.

Jun Wu

Xiaoyun Zhang

Sitao Yang

Xiaxia Liao

Wen Yi Tan

Shih-Hsien Huang

Feng Gao

The present application discloses an insulating sheet of a cylindrical battery, including an insulating sheet body. A tab through hole or a tab notch is formed in the insulating sheet body, the tab through hole or the tab notch is arranged to be eccentric. The insulating sheet of the cylindrical battery further includes a blind hole or a through hole formed in a middle portion of the insulating sheet body, and further includes a metal sheet. The metal sheet covers on an opening at an end of the blind hole or the through hole and/or is arranged in the blind hole or the through hole. A surface of the metal sheet protrudes or is flush with the opening of the blind hole or the through hole, and a thickness of the metal sheet in the through hole is smaller than a depth of the through hole.

Insulating sheet of cylindrical battery, method for assembling roll core and shell, and cylindrical battery

The present application discloses an improved aluminum cover plate of a battery, including a cover plate, a metal sheet and an electrode column. The electrode column penetrates and is arranged in rivet holes of the cover plate and the metal sheet, and is riveted with the metal sheet. A first sealing ring is arranged between a cap portion and a nail portion of the electrode column and the cover plate. A second sealing ring is arranged on an outer periphery of the nail portion of the electrode column, and the second sealing ring is clamped and arranged between the cover plate and the metal sheet. The first sealing ring and the second sealing ring are arranged separately.

Aluminum cover plate of battery

A method for forming a semiconductor structure includes forming a gate structure on a substrate, performing a deposition process to form a nitride layer to cover the substrate and the gate structure, performing an in-situ annealing process to the nitride layer, and performing an anisotropic etching process to the nitride layer after the in-situ annealing process to form a spacer on a sidewall of the gate structure.

Method for forming a semiconductor structure

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Wuxi, China

Jun Wu