Other

General Instrument Corporation of Delaware

Jun Wu

Willem G Einthoven

John Amato

Dennis Garbis

Joseph Y Chan

Gregory Zakaluk

Jack Eng

Lawrence LaTerza

Yaomin Xia

Joseph W Stucki

The invention relates to temperature indicating compositions which display temperature dependent color changes. The invention encompasses temperature indicating compositions, materials, devices and methods of their use. The temperature indicating compositions of the invention are clays that can be used to detect temperature and temperature changes at sub-ambient and particularly sub-zero &deg; C. temperatures. Temperature of a selected environment can be monitored by placing a temperature-sensitive composition comprising the clay material of this invention in contact with that environment and monitoring the color of the composition.

Color temperature indicator

A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa portion includes three germanium doped layers that introduce strain to speed up recombination of charge carriers. The topography of the base region of the rectifier has a high-low junction that includes a central portion that is deeper in the mesa than the germanium-doped layers and an edge portion that is shallower in the mesa than the germanium-doped layers and forms a positive bevel angle with the tapered side walls of the mesa,

High voltage silicon diode with optimum placement of silicon-germanium

Significant reduction in the cost of fabrication of shallow junction, Schottky or similar semiconductor devices without sacrifice of functional characteristics, while at the same time achieving the advantages is achieved, after the non-polishing cleaning step is essentially performed, by subjecting the substrate to conditions which move disadvantageous factors within said substrate into a space substantially at said surface, followed by substantially removing said factor-containing space from said substrate chemical removal step, followed etching and vapor deposition steps. Although these new steps add time, and therefore cost, to the overall process, the devices under discussion when produced by known industry processes require yet more time, and involve yet more expense, so that the total process represents a substantial reduction in the cost of their manufacture while producing devices which are the equivalent or superior in electrical performance to such devices which are made by known industry processes.

Low cost method of fabricating shallow junction, Schottky semiconductor

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Coram, NY, United States of America

Jun Wu