Samsung Electronics Co., Ltd.

Horiba Stec, Co., Ltd.

Jun-Won Lee

Chung-Ha Kim

Seung-Ho Jang

Hyun-Keun Son

Jang-Woon Kim

Byoung-Deog Choi

Jae-Ho Baik

Ik-Soo Kim

Hyuk-Woo Kwon

Gil-heyun Choi

Bong-Soo Kim

Ki Seok Lee

Myeong-Dong Lee

Dong Suk Shin

Seok Han Park

Young-Min Ko

Hoi Sung Chung

Yoo Sang Hwang

Ha-Young Yi

Tae-Hoon Lee

Hong-Gun Kim

Sung Hee Han

Jang-Hyoun Youm

Ichiro Nishikawa

Masanori Terasaka

Yong-Soon Choi

Sang-Jin Choi

Heok-Jae Lee

Jae-Seok Kim

Kong Soo Lee

Masashi Hamada

Eun-kee Hong

Dong-Ok Shin

Hyun-Sik Sim

Hyung-Ho Kim

Hyuk-Yul Choi

Ho-Gon Kim

Jung-Suk Oh

Tae Sung Kang

Hyuk Woo Kwon

Geum-bi Mun

Jae-kang Koh

A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.

DRAM with a hydrogen-supply layer and a high-capacitance embedded capacitor with a cylindrical storage node

Methods of fabricating a semiconductor device are provided. The methods may include forming a gate structure on a core-peri region of a substrate. The substrate may further include a cell region. The methods may also include forming a gate spacer on a sidewall of the gate structure, forming a first impurity region adjacent the gate spacer in the core-peri region of the substrate by performing a first ion implantation process, removing the gate spacer, forming a second impurity region in the core-peri region of the substrate between the gate structure and the first impurity region by performing a second ion implantation process, forming a stress film on the gate structure, an upper surface of the first impurity region, and an upper surface of the second impurity region, and forming a recrystallization region by crystallizing the first impurity region and the second impurity region by performing an annealing process.

Methods of fabricating semiconductor device

A first bit line structure is disposed between a first contact structure and a second contact structure. A first air spacer is interposed between the first contact structure and the first bit line structure. A first separation space is connected to an air entrance of the first air spacer and interposed between the first contact structure and the first bit line structure. A cover insulating pattern with a gap portion is interposed between the first contact structure and the second contact structure. The gap portion has a downwardly-decreasing width. An air capping pattern covers the cover insulating pattern to seal the first separation space.

Semiconductor device

Methods for fabricating a semiconductor device are provided including sequentially forming a first hard mask layer, a second hard mask layer and a photoresist layer on a target layer, patterning the photoresist layer to form a photoresist pattern, sequentially patterning the second hard mask layer and the first hard mask layer using the photoresist pattern as an etching mask to form a first hard mask pattern and a second hard mask pattern on the first hard mask pattern, and etching the target layer using the first hard mask pattern and the second hard mask pattern as an etching mask, wherein the second hard mask layer includes impurity-doped amorphous silicon.

Methods of fabricating semiconductor devices

A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.

Semiconductor device and method for fabricating the same

A vaporizer includes a main body including a first body and a second body. The first body has an upper portion narrowing in a direction of a height of the first body and the second body has a cavity in which the first body is positioned. A mixing chamber is between the first and second bodies. The second body includes a carrier gas injection path connected to a carrier gas inlet formed in an upper portion of the mixing chamber. The carrier gas injection path carries a carrier gas. A source material injection path is connected to a source material inlet formed in the mixing chamber. The source material injection path carries a liquid source material. A discharge is connected to an outlet formed in a lower portion of the mixing chamber. A mixed fluid including the carrier gas and the liquid source material is discharged through the discharge path.

Vaporizer and thin film deposition apparatus including the same

An electronic device according to one embodiment may include: a first housing including a first side; a second housing including a second side facing the first side; at least one first magnetic member configured to be rotatably disposed inside the first housing and adjacent to the first side; and at least one second magnetic member configured to be rotatably disposed inside the second housing and adjacent to the second side, wherein the first housing and the second housing are rotatably coupled to each other by a magnetic force between the at least one first magnetic member and the at least one second magnetic member. Various other embodiments are also possible.

Electronic device including plurality of housings

Electronic device

A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.

Methods of fabricating semiconductor devices having various isolation regions

Growing community of inventors

Asan-si, South Korea

Jun-Won Lee