Mitsubishi Heavy Industries Limited

Toray Industries, Inc.

National Institute of Advanced Industrial Science and Technology

Mitsubishi Heavy Industries Machine Tool Co., Ltd.

Jun Utsumi

Takayuki Goto

Kensuke Ide

Takenori Suzuki

Hideki Takagi

Masato Kinouchi

Takeshi Tsuno

Satoshi Tawara

Masahiro Funayama

Toshiaki Tanaka

Hiroshi Nagase

Koji Nakano

Yasuhiko Tanaka

Hiroyuki Sugaya

Yoichiro Tsumura

Kuniaki Kawamura

Takashi Endoh

Junzo Kamei

Kanji Takahashi

Saburo Sone

Masanobu Naruto

Yuuichi Kurashima

Atsushi Kijima

Kazuo Hosoi

Shigehisa Wada

Tetsuo Sudo

Osamu Kawabata

Makoto Kihara

Emiko Sano

Hiroo Kumagai

Satoko Yamada

Masanobu Uyama

Mizuo Matsui

Keizo Hanada

Shingou Sakurai

Shigeru Ichikura

Keiichiro Tsutsumi

Yoshiji Fujita

Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

Room-temperature-bonded semiconductor device and manufacturing method of room-temperature-bonded semiconductor device

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiOsubstrates) are bonded at room-temperature to have practical bonding strength.

Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Room temperature bonding apparatus and room temperature bonding method

A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.

Room temperature bonding apparatus

A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.

Room temperature bonding machine and room temperature bonding method

A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Manufcaturing method for room-temperature substrate bonding

A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.

A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate. Further, the room temperature bonding apparatus can use the angle adjustment mechanism to change a direction of the first substrate such that the first substrate and the second substrate come into parallel contact with each other, and uniformly impose the larger load on a bonding surface.

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room-temperature bonding method and room-temperature bonding apparatus including sputtering

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room temperature bonding using sputtering

A therapeutic drug for psychoneurotic disorders, which is useful for therapies of psychoneurotic disorders, especially restless legs syndrome is disclosed. The therapeutic drug for psychoneurotic disorders according to the present invention comprises as an effective ingredient an opioid &#x3ba; receptor agonist compound (excluding pentazocine) such as (&#x2212;)-17-(cyclopropylmethyl)-3,14&#x3b2;-dihydroxy-4,5&#x3b1;-epoxy-6&#x3b2;[N-methyl-trans-3-(3-furyl)acrylamide]morphinan hydrochloric acid salt.

Remedies for psychoneurosis

A DC/DC converter is comprised of a bipolar transistor, an inductor, a smoothing capacitor, an input terminal, an output terminal, and a grounded terminal. A base of the transistor includes a silicon germanium layer. The bipolar transistor has a high switching speed and a low on-state voltage through an optimization of a structure of the transistor.

DC/DC converter using bipolar transistor, method of manufacturing the same and DC power supply module using the same

This invention provides an antipruritc comprising an opiate &kgr; receptor agonist as an effective component, a new morphinan quaternary ammonium salt derivative and a new morphinan-N-oxide derivative which are useful in treating pruritus complicated with some diseases.

Antipruritic

This invention provides an antipruritic comprising an opiate &kgr; receptor agonist as an effective component, a new morphinan quaternary ammonium salt derivative and a new morphinan-N-oxide derivative which are useful in treating pruritus complicated with some diseases.

Growing community of inventors

Tokyo, Japan

Jun Utsumi