Nec Corporation

Photonics Electronics Technology Research Association

Nippon Telegraph and Telephone Corporation

Jun Ushida

Junichi Fujikata

Masatoshi Tokushima

Daisuke Okamoto

Kenichi Nishi

Motofumi Saitoh

Akio Toda

Shigeru Nakamura

Hirohito Yamada

Keishi Ohashi

Toru Tatsumi

Kazuhiko Kurata

Shigeki Takahashi

Liang Ding

Akihito Tanabe

Toshio Baba

Kenichiro Yashiki

Tai Tsuchizawa

Akiko Gomyo

Shiyang Zhu

Masayuki Shirane

Ming-Bin Yu

Seiichi Itabashi

To provide an optical element that can be more easily aligned with an optical fiber, an optical element includes one grating coupler optically coupled to an optical fiber, a waveguide connected to the grating coupler, a multimode interferometer connected to the waveguide on the opposite side to the grating coupler, and a waveguide inserted between two input/output ports on the branched side of the multimode interferometer.

Optical element

Provided is a light receiving element with high light receiving sensitivity. The light receiving element comprises: a light absorbing layer that absorbs light to generate a carrier; and a diffraction element that converts the optical path of first polarized light, which is obliquely incident on a plane formed by the light absorbing layer, so that the first polarized light propagates in a first direction along the light absorbing layer, and that converts the optical path of second polarized light incident from the same direction as the first polarized light so that the second polarized light propagates in a second direction, opposite the first direction, along the light absorbing layer.

Photodetector having one-dimensional grating structure

A grating structure for a grating coupler is provided which has a high efficiency resulting from the operating principle, is easily manufactured, and simultaneously has little reflection loss. This grating structure is provided with a core layer having periodic recesses and protrusions formed on the upper surface, a first upper cladding layer in contact with the upper surface of the core layer, a second upper cladding layer in contact with the upper surface of the first upper cladding layer, and a first lower cladding layer in contact with the lower surface of the core layer. The recessed portions of said recesses and protrusions are filled with the same material as the first upper cladding layer. The refractive index of the material forming the core layer is greater than the refractive index of the materials forming the first upper cladding layer, the second upper cladding layer and the first lower cladding layer. The refractive index of the material of the first upper cladding layer is greater than the refractive index of the material of the second upper cladding layer. The thickness from the upper surface of the protruding portions of the recesses and protrusions to the upper surface of the first upper cladding layer is within the range obtained by subtracting &#xbd; of the depth of the recesses and protrusions from ((2m&#x2212;1)/4&#xb1;&#x215b;) times (mbeing a positive integer) the wavelength, in the material forming the first upper cladding layer, of light inputted and outputted by the grating coupler.

Grating structure, and manufacturing method of grating coupler provided therewith

A grating coupler includes a grating including a core and an anti-phase reflection coating provided on at least one part of the grating. The anti-phase reflection coating includes a high refractive index layer and a buffer layer. The high refractive index layer has at least one selected from a plurality of attributes characterizing the high refractive index layer. The at least one selected attribute gradually deceases along a propagation direction of light in the core of the grating.

Grating coupler with high optical coupling efficiency for SMF

An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core () which is formed on a clad layer () and includes a portion composed of silicon in which an impurity of 10cmor more is doped, and is used by being optically connected in series with an optical waveguide including a core () composed of silicon. The optical absorption core () is sufficient provided that, at least, an impurity of around 10cmis doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 10-10cm. The existence of this impurity causes absorption of light in the optical absorption core ().

Optical waveguide type optical terminator

Provided is a connecting channel that has manufacturing tolerance, can suppress light loses, improves reliability of the connecting channel, and connects an optical device and an optical waveguide. The connecting channel includes first silicon layer () that has rib-shaped part (') extending in a longitudinal direction of the connecting channel, and second silicon layer () that is stacked on first silicon layer () to partially overlap rib-shaped part&#x2032;, and extends in the longitudinal direction. Second silicon layer () has tapered part (W) tapered toward one end in the longitudinal direction, and is located away from an upper portion of rib-shaped part (&#x2032;) at an end surface of one end in the longitudinal direction.

Connecting channel

A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layerhaving a different conductivity type from a first semiconductor layeron the first semiconductor layervia a dielectric film, and the semiconductor layersandare connectable to an external terminal via highly-doped portionsand, respectively. In a region in the vicinity of contact surfaces of the semiconductor layersandwith the dielectric film, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layersandis wider than the stacked portion. At least one of the highly-doped portionsandis formed outside the stacked portion.

Electro-optical modulator

An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.

Optical modulator and method for manufacturing same

The present invention provides a small optical waveguide structure capable of converting the spot size of light, and capable of reducing the conversion loss when compared under the condition of the same waveguide length and performing an optical conversion with high efficiency. An optical waveguide structure () includes a base waveguide () including a taper section () whose width becomes continuously narrower from one side toward another side, and a narrow-width section () that is consecutively connected to a narrow-width side of the taper section () and extends toward the another side. In the optical waveguide structure (), at least three-layered upper waveguides (to) each of which has a planar shape smaller than the taper section () and includes a planar-view-roughly-wedge-shaped section whose width becomes continuously narrower from the one side toward the another side at least on a tip side are stacked above the taper section () of the base waveguide () in such a manner that the planar shape becomes successively smaller from the base waveguide side ().

Optical waveguide structure and optical waveguide device

To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer () having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer () laid on first-conduction-type semiconductor layer (), and semiconductor layer () laid on dielectric layer (), having the width at the side opposite from dielectric layer () increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

Optical modulator

In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Silicon-based electro-optic device

An optical modulation structure includes a lower cladding layer (), a first silicon layer () integrally formed from silicon of a first conductivity type on the lower cladding layer () while including a core () and slab regions () arranged on both sides of the core () and connected to the core, a concave portion () formed in an upper surface of the core (), and a second silicon layer () of a second conductivity type formed on a dielectric layer () in the concave portion () so as to fill the concave portion ().

Optical modulation structure and optical modulator

In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)&#x3bb; to &#x3bb; [&#x3bb;: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than &#x3bb;/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

Waveguide path coupling-type photodiode

A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Semiconductor device

Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chipand an optical interconnection chip. The optical interconnection chipincludes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chipincludes a transmission section(for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section(for instance, a bump) to electrically connect with the optical element.

Growing community of inventors

Tokyo, Japan

Jun Ushida