Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Shanghai Kaihong Technology Co., Ltd.

Jun Tao Guo

Cheng Yi Huang

XiaoChun Tan

Chia Chi Yang

Zhi Bing Deng

Josh Yang

Chen Yi Huang

Wen Jun Weng

A bandgap reference circuit and method of using the same are provided. The bandgap reference circuit includes a startup component; an output component; and a bandgap core component coupled there-between. The bandgap core component includes a reference point having a voltage associated with an output signal of the output component. A controller is configured for controlling the bandgap core component and the output component to switch between a low power consumption mode and a normal operation mode based on the voltage at the reference point. When the bandgap core component and the output component operate in the normal operation mode, the bandgap reference circuit outputs a stable voltage and has a first power consumption. When the bandgap core component and the output component operate in the low power consumption mode, the bandgap reference circuit has a second power consumption less than the first power consumption.

Bandgap reference circuit for reducing power consumption and method of using the same

Level-shifter circuits and methods of using the same are provided. A level-shifter circuit includes a latch unit and a level-shifting unit. The latch unit is configured to generate a latch signal for storing a logic state of a first digital signal in a first power supply domain. The level-shifting unit is configured to shift a voltage of the latch signal to output a second digital signal in a second power supply domain. The latch unit and the level-shifting unit are powered by a power supply voltage in the second power supply domain.

Level-shifter circuits and methods of using the same

Embodiments of the present invention includes a method of assembling a chip scale package (CSP). The method comprises adding bumps, sawing the saw streets from the front of a wafer, molding the front of the wafer, grinding the back of the wafer, sawing the saw streets from the back of the wafer, molding the back of the wafer, and sawing between devices to form a plurality of packaged devices. Sawing the saw streets from the front of the wafer establishes a first cut. Molding the front of the wafer includes using a first mold compound such that the mold compound fills in the first cut. Sawing the saw streets from the back of the wafer establishes a second cut.

Chip scale package fabrication methods

In one embodiment the present invention includes a method of manufacturing a chip scale package. Embodiments of the present invention include sawing kerfs between semiconductor device boundaries on opposite sides of the wafer and filling the kerfs with mold compound. The devices may then be sawed into individual packaged devices encapsulated in mold compound. In one embodiment, kerfs on opposite sides of the wafer have different widths to create a step in the wafer boundary with the mold compound, which improves the integrity of the package. In one embodiment, a device and one or more neighboring devices are bonded together using bond wires to form a group of device that are encapsulated in mold compound.

Growing community of inventors

Shanghai, China

Jun Tao Guo