Wuhan Tianma Micro-electronics Co., Ltd

Fujitsu Corporation

Tianma Japan, Ltd.

Tetra Laval Holdings & Finance S.a.

Showa Denko Kabushiki Kaisha

Nlt Technologies, Ltd.

Xiamen Tianma Display Technology Co., Ltd.

Jun Tanaka

Kazushige Takechi

Kenji Sera

Yong Yuan

Toshiyuki Sudo

Tomohiro Ishihara

Shigeru Mori

Masato Okuda

Kazuto Nishimura

Hiroshi Tanabe

Norio Kobayashi

Shui He

Takaaki Wakisaka

Hiroaki Ogita

Tadakatsu Ikenoya

Morio Hara

Kazuo Nakayasu

FeiPeng Lin

An oxide semiconductor thin-film transistor device includes a gate electrode region, an oxide semiconductor region, a first source/drain electrode region, and a second source/drain electrode region. The oxide semiconductor region has a concentration distribution of an element capable of increasing resistance of an oxide semiconductor. The concentration distribution shows a first concentration at the centroid of a channel region overlapping the gate electrode region in a planar view. The concentration distribution shows a concentration higher than the first concentration in a vicinity of at least a part of a boundary defining an outer end of the channel region.

Oxide semiconductor thin-film transistor device and method of manufacturing the same

A thin-film transistor substrate includes an insulating substrate, a conductor layer including a top-gate electrode part of an oxide semiconductor thin-film transistor, an oxide semiconductor layer located lower than the top-gate electrode part and including a channel region of the oxide semiconductor thin-film transistor, and an upper insulating layer located between the conductor layer and the oxide semiconductor layer. The oxide semiconductor layer includes low-resistive regions lower in resistance than the channel region. The low-resistive regions sandwich the channel region in an in-plane direction of the insulating substrate and contain impurities to cause resistance reduction of the low-resistive regions. A concentration profile in a layering direction of the impurities to cause resistance reduction of the low resistive regions has one or more peaks. The one or more peaks are located outside the oxide semiconductor layer.

Thin-film transistor substrate with impurity concentration profile in layering direction having peak outside semiconductor layer

A first thin-film transistor includes a polysilicon film. A second thin-film transistor includes an oxide semiconductor film. A first insulating film is located upper than the polysilicon film and the oxide semiconductor film. The first insulating film is in contact with the oxide semiconductor film and covers at least a part of the polysilicon film and at least a part of the oxide semiconductor film. A second insulating film is located upper than the first insulating film and contains hydrogen at a concentration higher than the first insulating film. The first insulating film includes a first part and a second part. The first part includes a part covering the at least a part of the polysilicon film. The second part includes a part covering the at least a part of the oxide semiconductor film. The first part is thinner than the second part.

Thin-film transistor substrate having first and second insulating films

A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.

Thin-film device

A thin-film transistor substrate includes an insulating substrate, a first insulating layer, a first thin-film transistor including a first oxide semiconductor film, a second insulating layer located upper than the first insulating layer, and a second thin-film transistor including a second oxide semiconductor film different in composition from the first oxide semiconductor film. At least a part of the first oxide semiconductor film is provided above and in contact with the first insulating layer. The first insulating layer is the uppermost insulating layer among insulating layers located lower than and in contact with the first oxide semiconductor film. At least a part of the second oxide semiconductor film is provided above and in contact with the second insulating layer. The second insulating layer is the uppermost insulating layer among insulating layers located lower than and in contact with the second oxide semiconductor film.

Thin-film transistor substrate

The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes COin the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)&#xd7;(peak height) in an infrared absorption spectrum, the integrated intensity of a CO-attributed peak which appears in the vicinity of a wave number of 2,340 cmis 8E-4 times or more with respect to the integrated intensity of an SiO-attributed peak which appears in the vicinity of a wave number of 1,060 cm.

Silicon oxide film, production method therefor and semiconductor device having gate insulation film using the same

A pellet to be used in a multi-layer laminate for storing liquid foods, comprising a hydrophilic reducing organic compound and a hydrophilic and water insoluble thermoplastic resin, wherein the hydrophilic reducing organic compound is kneaded with the hydrophilic and water insoluble thermoplastic resin. The kneaded compound comprised of the hydrophilic reducing organic compound and the hydrophilic and water insoluble thermoplastic resin is then kneaded with a hydrophobic thermoplastic resin and formed into a pellet. The pellet is such that 50 grams of the pellet when stored at 15&#xb0; C. for one week in a sealed 180 ml container requires the presence of water in order to absorb oxygen.

Resin composition containing a reducing agent to be used in a multi-layer laminate for storing liquid foods

A cell transmitted from a transmitting terminal is multicast to a plurality of receiving terminals. The plurality of receiving terminals respectively transmit B-RM cells to the transmitting terminal. Each of the B-RM cells is assigned an ER value. An ER value calculating unit calculates an average value of the ER values which are respectively assigned to the B-RM cells from the plurality of receiving terminals. A B-RM cell processing unit transfers to the transmitting terminal a B-RM cell to which the ER value calculated by the ER value calculating unit is assigned. The transmitting terminal controls the transmission rate of a multicast communication with the plurality of receiving terminals according to the ER value assigned to the received B-RM cell.

Transfer rate controlling device and method thereof

A re-calculator circuit obtains the MCR value of each connection stored in an MCR storage unit, and performs a calculation in such a way as to impartially distribute the available rate band of a FIFO among active connections. The re-calculator circuit stores a rate band attached to the MCR value of each active connection by this calculation, in a virtual MCR storing unit as a virtual MCR value. This rate measurement unit refers to the virtual MCR value stored in the virtual MCR storage unit, and judges whether or not the input cell rate of each active connection exceeds the virtual MCR value. This result is inputted to an input control unit. The input control unit examines the input cell rate information and congestion monitoring information inputted from a queue length monitor unit for monitoring the volume of cells buffered in the FIFO, and determines whether to discard the incoming cell or to input the cell to the FIFO.

Apparatus and method for managing rate band

Hydantoin derivatives are industrially advantageously produced at a high yield by reacting hydantoin with carbonyl compounds in the presence of (i) amino acids or the salts thereof and (ii) inorganic alkali compounds for a relatively short reaction time in an aqueous medium.

Growing community of inventors

Kanagawa, Japan

Jun Tanaka