Kabushiki Kaisha Toshiba

Jun Takamatsu

Munehiro Ogasawara

Naoharu Shimomura

Hitoshi Sunaoshi

Kazuyoshi Sugihara

Kenji Ohtoshi

Takayuki Abe

Masamitsu Itoh

Yuichiro Yamazaki

Toru Koike

Kiyoshi Hattori

Itsuko Sakai

Shusuke Yoshitake

Kiminobu Akeno

Naoharu Shimomaura

A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.

Optical system adjusting method for energy beam apparatus

A charged particle beam system includes a chamber having an opening in a ceiling, a table placed immediately below the opening and movable in one direction, a laser interferometer set in the chamber, including a laser oscillator placed along the moving direction of the table, a movable mirror placed on the table side opposing the oscillator, a beam splitter placed to cross the laser beam and a fixed mirror fixed, immediately above the beam splitter, on the ceiling of the chamber, an optical lens barrel having an opening communicating with the opening of the chamber, and a beam gun set on a ceiling of the optical lens barrel to irradiate a specimen placed on the table with a charged particle beam through the first and second openings. At least an upper wall portion from the opening to the fixed mirror of the chamber is made of an invar alloy.

Charged particle beam system and chamber of charged particle beam system

An adsorption plate formed of a carrier and a precious metal catalyst carried by the carrier is provided at that portion of at least one of a beam column and a sample chamber incorporated in a charged-particle beam apparatus, in which carbon compounds may be generated. Further, a precious metal catalyst is provided on each deflector electrode contained in the beam column.

Charged particle beam apparatus and gas supply and exhaustion method employed in the apparatus

A reflection prevention board of a charged particle beam irradiation apparatus of the present invention comprises a laminate sheet having a plurality of thin films and a plurality of microholes through the laminate sheet. According to the present invention the reflection prevention board can be manufactured at a lower cost, the reason being that it is easier to form microholes in the thin films and then laminate these thin films in an aligned relation than to drill holes through a thicker sheet. By doing so it is possible to achieve a better yield. Further, much deeper microholes, which might not otherwise be achieved on a thick sheet, can be formed by using more thin films and a reflection prevention effect can be improved by doing so.

Charged particle beam irradiation apparatus

A charged beam applying apparatus comprises a column at least having a charged beam generation section and optical system for controlling the charged beam and a chamber for holding a specimen in place which is exposed with the charged beam. At least one inner portion of the column is formed of a specific material whose an atomic number is equal or less than 22. When a contamination is cleaned off in the column through the utilization of an oxidation effect, an oxide film is sometimes formed inside the column. The electric charging of the oxide film causes a beam control error. The specific material such as the metal of the atomic number causes very much less such error. This is because such specific material involves less emission of secondary electrons and less electric charging in the oxide film formed.

Charged beam applying apparatus

A charged beam apparatus comprises a source tank provided outside the column and containing a plasma source, a plasma generating apparatus for generating plasma from a plasma source supplied from the source tank, gate valves and an exhausting pump for introducing plasma generated by the plasma generating apparatus into the column and for exhausting the plasma therefrom, and an O-ring for restricting a passage of plasma in the column such that those portions of cleaning portions to be cleaned to which internal contaminants stick are mainly exposed to plasma. Therefore, it is possible to generation of an oxide film, a fluoride film, or the likes which cause drifting can be restricted.

Growing community of inventors

Kanagawa-ken, Japan

Jun Takamatsu