Kabushiki Kaisha Komatsu Seisakusho

Komatsu Electronic Metals Co., Ltd.

Jun Tajika

Hiroshi Inagaki

Aki Tabata

Noritake Suzuki

Teiichirou Chiba

Yukio Kobayashi

Seijiro Sano

Etsurou Satou

Osamu Kuboi

Makoto Kamachi

Tsuneo Miyake

To provide a semiconductor wafer having dot marks produced by irradiating laser beam capable of selecting a marking region capable of reading and writing marks in a state in which the marks hardly vanish and the semiconductor wafer is contained in a wafer cassette, inscribing information of an identification number or electric properties in the region and grasping past history by a unit of the wafer in processing steps or semiconductor fabrication steps thereafter, a very small dot mark is formed by irradiating laser having a diameter of 1 through 13 &mgr;m on an inner wall face of a notch ( ) formed on an outer peripheral face of a semiconductor wafer (W), particularly on an inclined face of its peripheral edge.

Semiconductor wafer

Pressure sensor

Semiconductor film pressure sensor and method of manufacturing same

An amorphous silicon solar cell comprising a glass substrate, a transparent conductive film formed on the glass substrate on one side thereof and having micro-columns or fine crystals irregularly formed on the other side, a plurality of amorphous silicon layers superposed on said other side of the conductive film, and a metal electrode formed on the superposed silicon layer. At the interface between the transparent conductive film and the amorphous silicon layer is formed an intermediate layer in which both materials of the conductive film and the silicon layer are mixed. The intermediate layer has a refractive index between the conductive film and the silicon layer. The glass substrate may be substituted with a metal substrate, in which case the plurality of silicon layers are formed directly on the metal substrate, on which the transparent conductive film having an irregular surface on the side opposite to the side where the silicon layers are formed and a metal electrode are formed in this order.

Amorphous silicon solar cells

Growing community of inventors

Hiratsuka, Japan

Jun Tajika