Hyundai Motor Company

Kwangwoon University Industry-academic Collaboration Foundation

Kia Corporation

Skhynix Inc.

Electronics and Telecommunications Research Institute

Kia Motors Corporation

Hynix Semiconductor Inc.

Jun Taek Park

Dong Gyu Sim

Sea Nae Park

Seung Wook Park

Wha Pyeong Lim

Joo Hyung Byeon

Chang Moon Lim

Hui Yong Kim

Jong Seok Lee

Gun Bang

Seoung Jun Oh

Myoung Soo Kim

Jeong Su Park

Han Sol Choi

In Hwan Lee

Byoung Hoon Lee

Seok Kyun Kim

A video decoding method for decoding a target block using intra prediction comprises decoding, from a bitstream, boundary line information specifying at least one boundary line for partitioning the target block. The boundary line information allows partitioning the target block into a plurality of non-rectangular blocks. The method further comprises determining intra prediction modes for the non-rectangular blocks based on the boundary line information; generating a prediction block of the target block by performing intra prediction on each of the non-rectangular blocks using the intra prediction modes; reconstructing a residual block of the target block from the bitstream; and reconstructing the target block by adding the prediction block and the residual block.

Video encoding and decoding using arbitrary block partitioning

A method and an apparatus are configured for intra prediction coding of video data. An apparatus for decoding video data includes: a decoding unit which obtains, from a bitstream, information on a luma prediction mode and information on a chroma prediction mode of a current coding block; and an intra prediction unit which generates luma prediction samples and chroma prediction samples of the current coding block. The intra prediction unit derives a luma intra prediction type and a luma intra prediction mode of the current coding block on the basis of the information on the luma prediction mode, and determines a chroma intra prediction mode of the current coding block on the basis of the luma intra prediction type and the luma intra prediction mode of the current coding block, and the information on the chroma prediction mode.

Method and apparatus for intra-prediction coding of video data

There is provided an image decoding method comprising: deriving a first prediction value of a current block by using at least one sample included in a reference block, obtaining an illumination compensation parameter on the basis of a predetermined reference region, deriving a second prediction value of the current block by applying the illumination compensation parameter to the first prediction value and reconstructing the current block on the basis of the second prediction value.

Method and device for effective video encoding/decoding via local lighting compensation

A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.

Methods of detecting printing defects on photoresist patterns

A semiconductor device includes a fin-shaped active region protruding from a surface of a base substrate. The fin-shaped active region includes a first impurity region and a second impurity region spaced apart from each other along a first direction and a channel region disposed between the first and second impurity regions. A trench is provided in the base substrate under the channel region. The trench extends in a second direction to intersect the fin-shaped active region in a plan view. A blocking layer fills the trench to overlap with the channel region of the fin-shaped active region. A gate is disposed to overlap with blocking layer and the channel region.

Semiconductor devices and methods of fabricating the same

A semiconductor device includes a cell mask pattern disposed in a cell region of a mask substrate and a vernier mask pattern disposed in a vernier region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion to transfer a different shape of pattern depending on the magnitude of exposure energy.

Photomask and method for forming pattern of semiconductor device using the same

Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.

Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same

A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model ('DAIM') for semiconductor device fabrication. The DAIM is applied with at least two acids having heterogeneous diffusion characteristics.

Diffused aerial image model semiconductor device fabrication

Growing community of inventors

Seoul, South Korea

Jun Taek Park