Samsung Electronics Co., Ltd.

Jun-taek Lee

Sun-yong Park

Sang-il Jung

Sang-sik Park

Kwang-hee Lee

Ji-Hoon Jung

Yi-Tae Kim

Yun-jeong Kim

Mikio Takagi

Sang-Il Jung

Woon-Phil Yang

Goon-suk Jang

Byung-hyun Yim

Jeong-seob Hong

Jae-heon Choi

An image sensor, imaging device, and method are provided. The image sensor includes a pixel array including an active area in which plural active pixels are located, and a dummy area in which plural dummy pixels are located, and a test element group (TEG) which is located in the dummy area and on which a test light-shielding pattern, different from a light-shielding pattern formed on the active area, is formed to detect a degree of misalignment between the light-shielding pattern and the active area.

Image sensor with test light shielding pattern, imaging device, and method of manufacturing image sensor chip package

A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region.

Unit pixel of image sensor and image sensor including the same

A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.

Method of detecting defects in image sensor, tester for the method, and control signal generator for the method

A method for driving an image sensor includes the steps of: sensing temperature from the image sensor; selecting a voltage level of a control signal in accordance with the sensed temperature; and detecting an image in response to the control signal having the selected voltage level. An image sensor comprises a temperature sensor configured to sense a temperature of the image sensor and a pixel array configured to detect an image in response to a control signal, wherein the control signal varies in voltage level as a function of the sensed temperature.

Image sensor having temperature sensor and driving method thereof

A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second conductivity type. The CMOS image sensor further includes a deep well of a first conductivity type located in a lower position than the photoelectric converter in the semiconductor layer and has a higher impurity concentration than that of the semiconductor layer. The deep well is located only in a portion of each of the plurality of pixels.

Complementary metal-oxide-silicon (CMOS) image sensor and method of forming the same

An image sensor includes a photoelectric converter formed in a semiconductor substrate to generate and integrate charges resulting from incident light, a first charge transmitter transmitting integrated charges to a charge detector, an overflow drain region discharging excess charges generated by the photoelectric converter, and a second charge transmitter transmitting the excess charges to the overflow drain region and having a width which is at least half of a span of the photoelectric converter.

Image sensor having first and second charge transmitters

An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain region formed adjacent to the first optical black region, the drain region discharging excess electrons generated in the active pixel region, and a second optical black region formed adjacent to the drain region, wherein another plurality of the shaded unit pixels are arranged therein.

Image sensor with drain region between optical black regions

In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.

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Hwaseong-si, South Korea

Jun-taek Lee