Applied Materials, Inc.

Jun Tae Choi

Juan Carlos Rocha-Alvarez

Zhong Qiang Hua

Rupankar Choudhury

Danny D Wang

Jason Michael Lamb

Hang Yu

Mayur G Kulkarni

Seong-Oh Woo

Junghoon Sun

Arun Thottappayil

Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.

Faceplate with localized flow control

Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.

Alignment systems employing actuators providing relative displacement between lid assemblies of process chambers and substrates, and related methods

The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and an oxygenator are used as the reactant gases. Inert or carrier gas(es) may also be used. In accordance with the present invention, the reactant gas mixture does not comprise a silane compound having the general formula SiH, wherein x has a range of 1 to 2, y has a range of 4 to 6. The material deposited is thus referred to herein alternatively as 'SiF-only FSG' or 'SiF-only fluorinated oxide' (&#x201c;SOFO&#x201d;).

Methods for improving low k FSG film gap-fill characteristics

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Cupertino, CA, United States of America

Jun Tae Choi