Samsung Electronics Co., Ltd.

Jun Sung Park

Yun Ki Lee

Jong Hoon Park

Bum Suk Kim

Dong Kyu Lee

Jung-Saeng Kim

Tae Sung Lee

Kwang Hee Lee

Chang Rok Moon

Dong Min Keum

Yong Kim

Tae Han Kim

In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

Back side illumination image sensors and electronic device including the same

An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

Image sensor having pixels with different light receiving areas

An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Image sensor with varying same-color color filter thickness

An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.

Image sensor with varying grid width

An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Image sensor and method for fabricating the same

Back side illumination (BSI) image sensors are provided. A BSI image sensor includes a substrate and a plurality of pixels configured to generate electrical signals responsive to light incident on the substrate. Each of the plurality of pixels includes a photodiode, an infrared radiation (IR) cut-off filter above the photodiode, a light shield pattern above the photodiode and including an opening corresponding to an area of 1 to 15% of each of the plurality of pixels, a planarization layer on the light shield pattern, and a lens on the planarization layer.

Growing community of inventors

Hwaseong-si, South Korea

Jun Sung Park