Samsung Electronics Co., Ltd.

Sungkyunkwan University

Jun-Suk Kim

Min-Young Chung

Jung-Je Son

Sung-Hoon Kim

Seung-Hoon Park

Byounghoon Jung

Sunheui Ryoo

Young-Kyo Baek

Hyung-Jin Choi

Kee-Moon Chun

Ho-Yeon Lee

Seung-Ri Jin

Kyung-hoon Lee

Han-Jun Kim

A method for providing a multimedia broadcast/multicast service (MBMS) to a terminal related to a vehicle by a broadcast and multicast service center (BM-SC) is provided. The method includes identifying at least one candidate service area that the terminal is predicted to pass through, and transmitting, to an MBMS-gateway (MBMS-GW), a request for configuring the radio bearer of the at least one candidate service area.

Methods and apparatuses for supporting wireless communication of vehicle

The present disclosure relates to a 5generation (5G) or pre-5G communication system for supporting a high data transmission rate beyond a 4generation communication system such as long term evolution (LTE). An operation method of a base station in a wireless communication system according to an embodiment of the present invention comprises the steps of: receiving at least one random access preamble from at least one terminal; and transmitting at least one message including a plurality of random access responses corresponding to the at least one random access preamble.

Apparatus and method for random access in wireless communication system

Provided are methods of forming a semiconductor device having an embedded stressor. The method includes forming a fin active area on a substrate. A gate structure configured to cross the fin active area and cover a side surface of the fin active area, and a gate spacer on a sidewall of the gate structure are formed. Preliminary trenches are formed in the fin active area adjacent to both sides of the gate structure using an anisotropic etching process. An etching select area is formed by oxidizing the fin active area exposed to the preliminary trenches. Trenches are formed by removing the etching select area. A stressor is formed in each of the trenches.

Method of forming semiconductor device having stressor

Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming preliminary trenches adjacent opposing sides of an active region. The method includes forming etching selection regions in portions of the active region that are exposed after forming the preliminary trenches. The method includes forming trenches by removing the etching selection regions. Moreover, the method includes forming a stressor in the trenches. Related apparatuses are also provided.

Methods of forming semiconductor devices including an embedded stressor, and related apparatuses

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Suwon-si, South Korea

Jun-Suk Kim