Skhynix Inc.

Soulbrain Sigma-aldrich, Ltd

Jun-Soo Jang

Jeong-Yeop Lee

Kee-Jeung Lee

Jae-Min Lee

Sang-Do Lee

Jong-Bum Park

Dong-Su Park

Ji-Won Moon

Dae-Hyun Kim

Jae-Sun Jung

Sang-Kyung Lee

Chang-Sung Hong

Hyun-Joon Kim

Jin-Ho Shin

Young-Jin Son

A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Semiconductor device and method for fabricating the same

A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.

Film-forming composition and method for fabricating film by using the same

Growing community of inventors

Chungcheongbuk-do, South Korea

Jun-Soo Jang