L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Hitachi-Kokusai Electric Inc.

Kabushiki Kaisha Toshiba

Tokyo Electron Limited

L'air Liquide

Jun Sonobe

Kenji Kameda

Yudai Tadaki

Atsushi Ando

Yuusuke Sato

Shuji Moriya

Naoki Tamaoki

Takako Kimura

Shih-Wen Huang

Takamitsu Shigemoto

Christopher Turpin

When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Method of manufacturing semiconductor device and method of cleaning processing vessel

A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an Fgas that are diluted with an inert gas into the chamber such that the FNO gas and the Fgas are reacted with the portion of silicon existing on the surface of the substrate to be processed.

Etching method and non-transitory storage medium

Substrate processing apparatus, method of manufacturing semiconductor device and method of cleaning processing vessel

Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.

Low pressure acetylene storage

A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.

Method of cleaning a film-forming apparatus

Growing community of inventors

Tsukuba, Japan

Jun Sonobe