Korea Institute of Energy Research

Jun Sik Cho

Ara Cho

Kee Shik Shin

Kyung Hoon Yoon

Young Joo Eo

Joo Hyung Park

Jae Ho Yun

Jihye Gwak

Sejin Ahn

SeoungKyu Ahn

Sang Hyun Park

Jin Su You

Jin Su Yoo

Kihwan Kim

Se Jin Ahn

Seoung Kyu Ahn

Ki Hwan Kim

Jin-Su Yoo

Ji Hye Gwak

The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

Solar cell having rear buffer layer and method of manufacturing the same

A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer(s); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s).

Method for manufacturing light absorption layer of thin film solar cell and thin film solar cell using the same

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a CuZnSnSthin film layer; forming a CuZnSn(S,Se)thin film layer; and forming a CuZnSnSthin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof

Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Device for controlling sample temperature during photoelectric measurement and solar cell measurement device using same

A method of fabricating an Ag&#x2014;(Cu&#x2014;)In&#x2014;Ga&#x2014;Se (A(C)IGS) based thin film using Se&#x2014;AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag&#x2014;(Cu&#x2014;)In&#x2014;Ga&#x2014;Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se&#x2014;AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se&#x2014;AgSe core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSedue to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Method of forming chalcopyrite light-absorbing layer

Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

Growing community of inventors

Daejeon, South Korea

Jun Sik Cho