Nuvoton Technology Corporation Japan

Jun Shimizu

Yusuke Kanda

A semiconductor device includes a substrate, a back-barrier layer, a channel layer that has a band gap smaller than a band gap of the back-barrier layer, a first barrier layer that has a band gap larger than the band gap of the channel layer, a second barrier layer that is provided to fill a first recessed portion and has a band gap larger than the band gap of the channel layer, a source electrode, a drain electrode, and a gate electrode. An In composition ratio of the first barrier layer is greater than or equal to 0 and less than an In composition ratio of the second barrier layer. An Al composition ratio of the first barrier layer is greater than or equal to an Al composition ratio of the second barrier layer.

Growing community of inventors

Toyama, Japan

Jun Shimizu