Samsung Electronics Co., Ltd.

Jun Seomun

Sangdo Park

Hyungock Kim

Bonghyun Lee

Sungok Lee

Kyungtae Do

Wook Hwan Kim

Jaehoon Kim

Hyo-Sig Won

Jung-Yun Choi

Wootae Kim

Youngsoo Shin

Hyosig Won

Jungyun Choi

Insub Shin

Kee Sup Kim

JungYun Choi

Byunghee Choi

Jaewan Yang

Sua Lee

Chungki Oh

JaeHan Jeon

Semiconductor devices may include standard cells arranged in a first direction and a second direction intersecting the first direction. Both the first and second directions may be parallel to an upper surface of the substrate. Each of the standard cells may include semiconductor elements. The semiconductor device may also include filler cells between two standard cells, and each of the filler cells may include a filler active region and a filler contact connected to the filler active region and may extend in the first direction. The semiconductor device may further include a lower wiring pattern electrically connected to at least one of the semiconductor elements and may extend into at least one of the filler cells in the second direction, and the filler contacts may include wiring filler contacts lower than the lower wiring pattern and connected to at least one of the lower wiring pattern.

Semiconductor devices and methods of manufacturing the same

Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.

Semiconductor device and method of fabricating the same

A semiconductor device includes standard cells disposed in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, each standard cell including an active region, a gate structure disposed to intersect the active region, source/drain regions on the active region at both sides of the gate structure, and first interconnection lines electrically connected to the active region and the gate structures; filler cells disposed between at least portions of the standard cells, each filler cell including a filler active region and a filler gate structure disposed to intersect the filler active region; and a routing structure disposed on the standard cells and the filler cells and including second interconnection lines electrically connecting the first interconnection lines of different standard cells to each other, wherein the second interconnection lines includes a first line having a first width and a second line having a second width larger than the first width.

Semiconductor devices

Voltage monitors include a predelay cell having an input responsive to a first clock signal. This cell is configured to generate a predelayed clock signal at an output thereof. A serially-connected string of data delay cells is provided, which has an input responsive to the predelayed clock signal. A serially-connected string of clock delay cells is provided, which has an input responsive to a second clock signal that is synchronized to the first clock signal. A plurality latches are provided. The latches have respective data inputs, which are responsive to first periodic signals generated at respective outputs of the serially-connected string of data delay cells, and respective clock/sync terminals, which are responsive to second periodic signals generated at respective outputs of the serially-connected string of clock delay cells. The latches enable loading of a delay code value, which indicates power supply voltage variation.

Voltage monitor for generating delay codes

A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.

System on chip and temperature control method thereof

A body biasing control circuit capable of being shared by a plurality of macro blocks and can independently control body voltages of a plurality of macro blocks. The body biasing control circuit includes a lookup table for storing a plurality of indexes where each index is associated with a body voltage appropriate for an operating state of a corresponding macro block. A control unit receives a corresponding index from the lookup table and generates a plurality of body voltages appropriate for an operating state of a macro block corresponding to the index and supplies the body voltages to the macro block.

Body biasing control circuit using lookup table and body biasing control method using same

Growing community of inventors

Seoul, South Korea

Jun Seomun