Samsung Electronics Co., Ltd.

Soongsil University

Jun-Seok Yang

Hyung-Sun Lim

Sang-il Jung

Ji-seon Paek

Hee-Sang Noh

Jeong-Ho Lee

Young-Eil Kim

Bok-Ju Park

Young-Hoon Park

Min-young Jung

An-Chul Shin

Sang-Hyun Baek

Dong-ki Kim

Young-hoon Park

Seung-Chul Lee

Hisanori Ihara

Jong-Won Choi

Ui-Sik Kim

Thomas Byung-Hak Cho

Won-Cheol Lee

Keon-Yong Cheon

Jun-Hee Jung

Yong-chae Jeong

Ji-Seon Paek

Sung-Hyun Yoon

Hyung-Min Jang

A device includes a substrate and a plurality of unit pixels disposed in and/or on the substrate, arranged in a honeycomb pattern and separated from one another by a deep trench isolation (DTI) layer. The plurality of unit pixels may include a group of unit pixels radially arranged around and equidistant from a central unit pixel.

Image sensor devices using offset pixel patterns

A transmitter in a wireless communication system is provided. The transmitter includes a baseband signal processor for detecting an envelope signal, a supply modulator (SM) for producing power to be supplied to a power amplifier using the detected envelope signal, and the power amplifier for receiving voltage from the SM and for amplifying power of a transmit signal. The SM generates a compensation signal corresponding to switching noise generated via switching amplification, and adds the compensation signal and the switching noise. The amplifier of the wireless communication system can produce low switching noise, and the envelope tracking power amplifier can prevent reception degradation due to the noise of the supply modulator.

Apparatus and method for removing noise of power amplifier in mobile communication system

An apparatus and a method for controlling transmission and reception control in a wireless communication system are provided. The apparatus includes at least one voltage regulator, a power source consumer, at least one capacitor, and a controller. The at least one voltage regulator provides a power source that is a regulated voltage. The power source consumer processes a Radio Frequency (RF) signal using the power source that is the regulated voltage. The at least one capacitor is connected to an output port of the at least one voltage regulator and a power source input port of the power source consumer. The controller turns off the at least one voltage regulator during a deactivation period of the communication apparatus and turns on the at least one voltage regulator during an activation period of the communication apparatus.

Apparatus and method for controlling transmission and reception operations in wireless communication system

An apparatus and a method for raising an output efficiency in a mobile communication terminal are provided. The apparatus includes a supply modulator and a power amplifier. The supply modulator includes a DC-DC converter, a voltage regulator, and a switching regulator. The supply modulator modulates an envelope component of an input signal to generate power. The power amplifier amplifies a phase component of the input signal using the power generated by the supply modulator as a power source of a collector/drain. The DC-DC converter raises battery power of the mobile communication terminal. The voltage regulator determines an output voltage of the supply modulator using the power raised by the DC-DC converter. The switching regulator determines an output current of the supply regulator using the battery power of the mobile communication terminal.

Device and method for increasing output efficiency of mobile communication terminal

An apparatus for amplifying power is provided. The apparatus includes a supply modulator for generating a supply voltage based on an amplitude component of a transmission signal, and a power amplify module for amplifying power of the transmission signal using the supply voltage, wherein the power amplify module includes a first power amplifier and a second power amplifier, and when an output power of the transmission signal is greater than a reference power, the first power amplifier amplifies the power of the transmission signal using the supply voltage, and when the output power of the transmission signal is equal to or less than the reference power, the second power amplifier amplifies the power of the transmission signal using the supply voltage.

Apparatus and method for expanding operation region of power amplifier

A transmit apparatus having a supply modulator is provided. The apparatus includes a detector and the supply modulator. In the method, the detector detects an output signal of the supply modulator. Also, the supply modulator receives the detected output signal of the supply modulator from the detector and calibrates a modulation characteristic of the supply modulator. The transmit apparatus having a supply modulator includes a modulator/demodulator (modem) and the supply modulator. The modem provides a calibration signal for calibrating a modulation characteristic of the supply modulator, to the supply modulator. The supply modulator outputs a modulated signal in accordance with the calibrated modulation characteristic of the supply modulator based on the calibration signal from the modem.

Apparatus and method for calibration of supply modulation in transmitter

An apparatus of a hybrid power modulator using interleaving switching is provided. The apparatus includes a linear switching unit for generating an output signal by comparing an envelope input signal and a feedback signal, an interleaving signal generator for generating an interleaving switching signal arranged not to supply the signal to input stages of P-type Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FETs) and N-type MOS FETs of power cells at the same time by comparing the output signal and a reference signal, and a switching amplifying unit for determining a level of the switching signal using the interleaving switching signal. Hence, the hybrid power modulator using the interleaving switching method in the envelope signal of the wide bandwidth maintains high efficiency and high linearity. In addition, the buck converter can use the single inductor by preventing the simultaneous on/off of the power cells.

Apparatus and method for interleaving switching in power amplifier

An apparatus and a method for expanding an operation region in an envelope tracking power amplifier are provided. The apparatus for amplifying power of a transmission signal includes an amplitude component determination unit, a supply modulator, and a power amplify module. The amplitude component determination unit determines an amplitude component of a transmission signal. The supply modulator generates a supply voltage to be provided to the power amplify module depending on the amplitude component of the transmission signal determined by the amplitude component determination unit. The power amplify module amplifies power of the transmission signal depending on the supply voltage generated by the supply modulator.

A method and an apparatus for digital up-down conversion using an Infinite Impulse Response (IIR) filter are provided. The method for digital up-down conversion for frequency conversion in a mobile communication system using plural frequency converts, includes IIR-filtering, by a magnitude response IIR filter having the same magnitude response as in Finite Impulse Response (FIR) filtering, an input signal and a stable filter coefficient calculated according to a Levinson polynomial; and receiving, by the magnitude response IIR filter, the IIR filtered signal, and performing IIR filtering by a phase compensation IIR filter having a filter coefficient compensating for a non-linear phase to a linear phase.

Method and apparatus for digital up-down conversion using infinite impulse response filter

Provided is a method of forming a semiconductor device. The method includes forming an insulating film on a semiconductor substrate, a conductive film on the insulating film, and a first structure and a second structure on the conductive film. The semiconductor substrate has first and second regions. The first and second structures are formed on the first and second regions, respectively. An impurity diffused region is formed in the semiconductor substrate using the first structure as a mask. The impurity diffused region overlaps the first structure. A portion of the first structure, and the conductive film are etched to respectively form a gate structure and a capacitor structure on the first and second regions.

Method of forming semiconductor device

A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.

Method of fabricating metal interconnection and method of fabricating image sensor using the same

A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.

Method of fabricating image sensor

Example embodiments may provide fine patterns for semiconductor devices and methods of forming fine patterns for semiconductor devices. Example methods may include forming a spacer pattern on a substrate and/or an insulating layer pattern adjacent to sides of the spacer pattern and/or disposed at the same level as the spacer pattern, forming a pair of recesses exposing sides of the spacer pattern by removing a portion of the insulating layer pattern, and/or filling a conductive material in the recesses.

Semiconductor devices using fine patterns and methods of forming fine patterns

An RF signal offset circuit using a half wavelength transmission line is provided. The RF signal offset circuit includes an RF transformer having an input coil and an output coil. The input coil has first and second input ports. The output coil has first and second output ports. One of the output ports is grounded. A half wavelength transmission line having first and second ends is connected in parallel to the input coil of the RF transformer. First and second resistance devices are respectively connected between the first end of the transmission line and the first input port of the RF transformer and between the second end of the transmission line and the second input port of the RF transformer.

Growing community of inventors

Seoul, South Korea

Jun-Seok Yang