University of California

Jun Seok Ha

Shuji Nakamura

Steven P DenBaars

Daniel Bryce Thompson

Jacob J Richardson

Frederick F Lange

Ingrid Koslow

A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution

A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays

Growing community of inventors

Goleta, CA, United States of America

Jun Seok Ha