Screen Holdings Co., Ltd.

Jun Sawashima

Takahiro Yamaguchi

Kenji Kobayashi

Akito Hatano

Motoyuki Shimai

Yuta Nishimura

Toyohide Hayashi

Toru Endo

Rikuta Aoki

Naozumi Fujiwara

Toru Edo

Akihiro Nakashima

Sei Negoro

Tomoaki Aihara

Toshimitsu Namba

Seiji Ano

Yuji Sugahara

Akihisa Ensatsu

Yuta Yamanouchi

Yuta Segawa

Tsung Ju Lin

Tatsumi Shimomura

A substrate processing apparatus includes a rotational holding member that rotates a substrate around a predetermined rotational axis while holding the substrate, a liquid supply member that supplies a liquid to the substrate held by the rotational holding member, and a resin-made tubular guard that surrounds the substrate held by the rotational holding member. The tubular guard has an inner peripheral surface and an uneven portion disposed at the inner peripheral surface. The uneven portion has a plurality of recessed portions and a plurality of protruding portions placed between the recessed portions adjacent to each other. The recessed portion has a width smaller than a diameter of a liquid droplet scattering from the substrate held by the rotational holding member and a depth in which the liquid droplet does not come into contact with a bottom portion of the recessed portion in a state in which the liquid droplet is in contact with the protruding portions. The protruding portion has a width that is smaller than the diameter of the liquid droplet and that is smaller than the width of the recessed portion.

Substrate processing apparatus and method of machining tubular guard

A substrate treating apparatus includes a treating housing and a gas supply unit. The treating housing treats substrates in the interior thereof. The gas supply unit supplies a gas to the interior of the treating housing. The gas supply unit has a filter, a duct, and a fan. The filter is located in an upper part of the treating housing. The filter blows off the gas to the interior of the treating housing. The duct is provided in the exterior of the treating housing. The duct is connected to the filter. The fan is provided in the exterior of the treating housing. The fan is connected to the duct. The fan is located in a position not overlapping the filter in plan view. At least part of the fan is located in the same height position as the treating housing.

Substrate treating apparatus

Disclosed is a substrate treating apparatus for performing treatment with supply of fluids to a substrate. The apparatus includes a first treatment housing, a treating section provided inside of the first treatment housing and configured to treat a substrate placed on a mount table with the fluids, a first fluid supplying section located on a first lateral side of the treating section, seen from a front side face where maintenance is performed to the first treatment housing, and configured to supply a first fluid of the fluids to the treating section, and a second fluid supplying section located on a second lateral side of the treating section, seen from the front side face, and configured to supply a second fluid of the fluids to the treating section.

Disclosed is a substrate treating apparatus in which a first treating unit is located rightward of a transportation space. The first treating unit includes a first holder. A second treating unit is located leftward of the transportation space. The second treating unit includes a second holder. The first holder has a center point positioned more rearward than a middle point of the first treating unit in plan view. The second holder has a center point positioned more forward than a middle point of the second treating unit in plan view. The second treating unit has a front end located more rearward than a front end of the first treating unit and more forward than a rear end of the first treating unit. The first liquid reservoir is located leftward of the transportation space and adjacent to and in front of the second treating unit.

A substrate processing apparatus includes a chemical liquid nozzlethat includes a chemical liquid discharge portdischarging a chemical liquid in a chemical liquid discharge direction D, inclined with respect to an upper surface of a substrate W, toward a target position Pwithin the upper surface of the substrate W, a spray shieldthat includes a shield surfacedirectly opposing the upper surface of the substrate W and with which the shield surfaceoverlaps with the target position Pin plan view and, when the chemical liquid nozzleand the shield surfaceare viewed from below, all portions of the chemical liquid discharge portare disposed at an outer side of an outer edge of the shield surfaceor on the outer edge of the shield surface, and a nozzle moving unitthat moves the chemical liquid nozzletogether with the spray shield

Substrate processing method and substrate processing apparatus

A substrate processing apparatusincludes a processing unit, a reservoir, a processing liquid pipe, a pump, a filter, a first flow rate section, a first return pipe, a first adjustment valve, a second return pipe, a branch supply pipe, a second flow rate section, and a controller. The first flow rate sectionis placed in the processing liquid pipeand measures a flow rate or pressure of the processing liquid flowing through the processing liquid pipe. The first adjustment valveis placed in the first return pipeand adjusts a flow rate of the processing liquid flowing through the first return pipe. The controller controls an opening degree of the first adjustment valvebased on the flow rate or the pressure of the processing liquid measured by the first flow rate section

Substrate processing apparatus and substrate processing method

Disclosed is a substrate treating apparatus. All treating units are each arranged such that a treatment chamber, a chemical piping space, and an exhaust chamber are located side by side along a transportation space, the chemical piping space is located on a first side of the treatment chamber, and the exhaust chamber faces the chemical piping space across the treatment chamber when seen from the transportation space. The exhaust chamber faces the chemical piping space across the treatment chamber, leading to prevention of obstruction of a passage for passing a pipe, configured to supply a chemical to a substrate held by a holding rotator, by an exhaust pipe. Moreover, a single type of treating units is enough for the substrate treating apparatus instead of two types of treating units currently used. This results in sharing of components by all the treating units.

A substrate processing apparatus includes an indexer block and a processing block adjacent to the indexer block in a lateral direction of the indexer block. A plurality of processing block layers are stacked in an up-down direction in the processing block. The indexer block includes a container holding portion and a first transfer robot that transfers a substrate between the substrate container held by the container holding portion and the processing block. Each of the processing block layers includes a plurality of processing units, a substrate placing portion, a dummy-substrate housing portion, and a second transfer robot that transfers a substrate between the substrate placing portion and the plurality of processing units and that transfers a dummy substrate between the dummy-substrate housing portion and the plurality of processing units.

A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.

Substrate processing apparatus

A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis of a substrate. Hydrogen peroxide water, that is one of components of a chemical liquid (SPM), is supplied to the upstream flow passage from a component liquid flow passage. A mixing ratio changing unit including a plurality of first flow control valves and a plurality of second flow control valves independently changes mixing ratios of sulfuric acid and hydrogen peroxide water included in the chemical liquid to be discharged from the plurality of discharge ports for each of the upstream flow passages.

A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis of a substrate. A return flow passage is connected to the upstream flow passage. A downstream heater heats liquid flowing through the upstream flow passage. A downstream switching unit supplies the liquid, supplied to the plurality of upstream flow passages from the supply flow passage, to one of the plurality of discharge ports and the return flow passage, selectively.

A substrate processing apparatus includes a rotating holder for a substrate, a first nozzle used to eject a jet flow, a second nozzle used to discharge a continuous flow, and a nozzle moving unit integrally moving the first and second nozzles. A landing position of the continuous flow is located closer to a rotation center than a landing position of the jet flow is. At least movement paths of the landing positions of the jet flow and the continuous flow or flow directions of the continuous flow and the jet flow are different from each other. The movement paths are made to be different from each other by locating the landing position of the continuous flow downstream of the movement path of the landing position of the jet flow. The flow directions are made to be different from each other by tilting the continuous flow.

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Kyoto, Japan

Jun Sawashima