Tokyo Electron Limited

Jun Sato

Shigehiro Miura

Hitoshi Kato

Hiroyuki Kikuchi

Takashi Chiba

Kazuhide Hasebe

Masato Yonezawa

Masahiro Murata

Takeshi Kobayashi

Pao-Hwa Chou

Toshiki Takahashi

Hiroki Murakami

Nobutake Nodera

Kohei Fukushima

Kentaro Oshimo

Kiyoshi Maeda

Naomi Onodera

Kiyohiko Gokon

Tomoko Sugano

Eiichi Nishimura

Mitsuhiro Okada

Jun Ogawa

Hiroyuki Matsuura

Shigeru Tahara

Shigeru Nakajima

Mitsunori Ohata

Katsutoshi Ishii

Yuichiro Morozumi

Toshiyuki Ikeuchi

Hiroki Maehara

Masanobu Igeta

Katsuyoshi Aikawa

Yoshihiro Umezawa

Tetsuya Shibata

Kazuo Yabe

Eiji Kikama

Kazuya Yamamoto

Masanobu Matsunaga

Masayuki Hasegawa

Kazuya Matsumoto

Koichi Orito

Chaeho Kim

Toshiyuki Nakatsubo

Masataka Toiya

Yusaku Izawa

Takehiro Fukada

Yuji Nishino

Kiyotaka Kikuchi

Ken Ando

Makoto Ishigo

With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.

Plasma processing method and substrate processing apparatus

A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.

Deposition method

An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

Etching method

A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

Film forming method

A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.

Method for dry cleaning a susceptor and substrate processing apparatus

A deposition method includes a first process performed by repeating causing aminosilane gas to be adsorbed on a substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating a first reformed gas by plasma and supplying the first reformed gas to the first silicon oxide film, and a second process, performed after the first process, by repeating causing aminosilane gas to be adsorbed on the substrate; causing a second silicon oxide film to be stacked on the substrate by supplying oxidation gas; and performing a reforming process on the second silicon oxide film by supplying a plasma-activated second reformed gas. The first reformed gas has a smaller effect of oxidizing the substrate than the second reformed gas.

There is provided a film forming method of embedding a film in a groove formed in a front surface of a substrate, which includes: depositing an in-conformal film in the groove formed in the front surface of the substrate while forming a V-like cross-sectional shape in the groove; and embedding a conformal film in the groove by depositing the conformal film.

Film forming method and film forming apparatus

A cleaning method for dry cleaning a susceptor disposed in a process chamber of a film deposition apparatus is provided. In the method, a protective member is placed on a substrate receiving region provided in the susceptor. A cleaning gas is supplied to the susceptor having the protective member placed on the substrate receiving region, thereby removing a film deposited on a surface of the susceptor by etching.

Cleaning method and film deposition method

A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. A source gas supply unit extending along a radial direction of the turntable is provided above the turntable with a first distance from the turntable such that the source gas supply unit covers an entire length of the substrate receiving region in the radial direction. An axial-side supplementary gas supply unit is provided in the vicinity of the source gas supply unit and above the turntable with a second distance from the turntable. The second distance is longer than the first distance. The axial-side supplementary gas supply unit covers a predetermined region of the substrate receiving region on the axial side in the radial direction of the turntable.

Film deposition apparatus and film deposition method

A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(&#x3c6;, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value &#x3c6; of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.

Method of etching object to be processed

A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.

Particle removal method and substrate processing method

A film deposition method for filling a recessed pattern with a SiN film is provided. NHgroups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NHconverted to first plasma to the surface of the substrate containing the recessed pattern. The NHgroups is partially converted to N groups by supplying a second process gas containing Nconverted to second plasma to the surface of the substrate containing the recessed pattern on which the NHgroups is adsorbed. A silicon-containing gas is caused to adsorb on the NHgroups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NHgroups and the N groups are adsorbed. The above steps are cyclically repeated.

Film deposition method

A substrate processing apparatus includes a process chamber, and a turntable provided in the process chamber and including a substrate holding region formed in a top surface along a circumferential direction of the turntable. A surface area increasing region is provided in the top surface of the turntable around the substrate holding region and is configured to increase a surface area of the top surface of the turntable to an area larger than a surface area of a flat surface by including a concavo-convex pattern in its top surface. A process gas supply unit is configured to supply a process gas to the top surface of the turntable.

Substrate processing apparatus, substrate processing method and substrate holding member

There is provided a substrate processing method using a processing chamber that is provided with a first process gas supply region, a first exhaust port through which a first process gas supplied to the first process gas supply region is exhausted, a second process gas supply region, a second exhaust port through which a second process gas supplied to the second process gas supply region is exhausted, and a communication space through which the first exhaust port and the second exhaust port communicate with each other, wherein an exhaust pressure in the first exhaust port is set higher than an exhaust pressure in the second exhaust port by a predetermined pressure so as to perform a substrate process while preventing infiltration of the second process gas into the first exhaust port.

Substrate processing method and substrate processing apparatus

A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

Method for processing a substrate and substrate processing apparatus

Growing community of inventors

Iwate, Japan

Jun Sato