Samsung Sdi Co., Inc.

Jun Sakong

Jin-Hee Bae

Kunbae Noh

Taeksoo Kwak

Jinwoo Seo

Junyoung Jang

Byeonggyu Hwang

Woo-Han Kim

Taek-Soo Kwak

Il Yong Jung

Sang-Ran Koh

Kwen-Woo Han

Jun-Young Jang

Hui-Chan Yun

Jiho Lee

Yoong-Hee Na

Seungwoo Jang

Bo-Sun Kim

Byeong-Gyu Hwang

Eun-Seon Lee

Kun-Bae Noh

Wan-Hee Lim

Huichan Yun

Sae-Mi Park

Jingyo Kim

Sooyeon Sim

Chungheon Lee

Byeong Gyu Hwang

Wanhee Lim

Yonggoog Kim

Yoonyoung Koo

Hyeonsu Jo

Euihyun Kim

Jin-Gyo Kim

Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Composition for forming silica layer, manufacturing method for silica layer, and silica layer

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in anH-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl, when a peak derived from NSiHand NSiHis referred to as Peak 1 and a peak derived from NSiHis referred to as Peak 2, a ratio (P/(P+P)) of an area (P) of Peak 1 relative to a total area (P+P) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P/P) of an area (P) of Region A relative to an area (P) of Region B is greater than or equal to about 1.5.

Composition for forming silica layer, silica layer and electronic device incorporating silica layer

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiOconversion rate of greater than about 0 and less than or equal to about 15. The SiOconversion rate is represented by: SiOconversion rate=(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%)&#x2212;(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%).

Composition for forming silica layer, silica layer, and electronic device

A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

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Suwon-si, South Korea

Jun Sakong