Skhynix Inc.

Hynix Semiconductor Inc.

Jun Rye Rho

Seung Gu Ji

You Sung Kim

Cheul Hee Koo

In Ho Jung

Jae Yong Park

Provided herein may be a memory controller. The memory controller may include a shared memory configured to store data, a hardware group configured to generate entry data including result data of an operation corresponding to a command, and output an interrupt signal generated in response to storage of the entry data, and a processor group configured to receive the entry data from the shared memory, wherein the processor group includes an interface converter configured to manage first index information of the entry data in response to the interrupt signal, and generate a first address for the entry data based on the first index information, and a data transmitter configured to receive, based on a first address, the entry data through a first interface using a data input/output scheme to be set by firmware, and transfer the received entry data to a processor through a second interface using a fixed data input/output scheme.

Memory controller and data input/output method thereof

A storage device may include a memory device including a memory block coupled to physical word lines each including pages, and a memory controller configured to control the memory device such that, in response to a power off event occurring during a program operation on a selected page, fine program operations are performed on to-be completed pages, which precede the selected page, on which foggy program operations have been completed and on which the fine program operations have not yet been performed. The program operation may include a foggy program operation of programming memory cells included in the pages so that each memory cell has a threshold voltage corresponding to any one of intermediate states corresponding to states, and a fine program operation of programming the memory cells having the threshold voltages corresponding to the intermediate states so that each memory cell has a threshold voltage corresponding to any one state.

Storage device and method for foggy and fine programming

An operating method of a memory system that includes a memory device including a plurality of planes and a plurality of page buffers for the plurality of planes, respectively, and a controller suitable for controlling the memory device, the operating method includes: providing, by the controller, the memory device with page read commands for respective target planes among the plurality of planes; simultaneously reading, by the memory device, data from the target planes and buffering the data in target page buffers corresponding to the respective target planes in response to the page read commands; selectively providing, by the controller, the memory device with an all-plane data output command or respective-plane data output commands from which target page addresses are omitted; and sequentially outputting, by the memory device, the data buffered in the target page buffers, in response to the all-plane data output command or the respective-plane data output commands.

Memory system and operating method thereof for controlling a multi-plane read operation

A semiconductor apparatus includes a memory device configured to include a buffer memory block and a main memory block, and to correct data read from the buffer memory block based on error information, and to perform a program loop to store corrected data in the main memory block, and a memory controller configured to perform an error checking and correction (ECC) operation on the data and to output the error information obtained through the ECC operation to the memory device.

Semiconductor apparatus performing program loop by using error information and method of operating the same

Provided is a memory system including a semiconductor memory device including a buffer memory block suitable for storing page data, and including a main memory block, and a controller suitable for generating a combination seed by performing a logical operation on a randomizing seed, a derandomizing seed, and error information, and for providing the generated combination seed to the semiconductor memory device.

Memory system including randomizer and derandomizer

A method operates a nonvolatile memory apparatus. The method includes performing a first write operation to store first data in first to third memory cells; and performing a second write operation to store second data in the first to third memory cells in which the first data has been stored, wherein, as a result of the first write operation and the second write operation, each of the first to third memory cells has one of first to third states.

Nonvolatile memory apparatus and operating method thereof

A semiconductor memory system includes a memory area and an error-correcting (ECC) circuit. The memory area includes a plurality of cells, and the ECC circuit is configured to determine whether uncorrectable error data exists or not by using a parity according to cell data of the memory area in a read mode and a parity according to an encoding result of corrected data of the cell data.

Semiconductor memory system having ECC circuit and controlling method thereof

A nonvolatile memory device includes a memory cell array including a number of memory cells coupled to a selected bit line, a bit line selection unit configured to select and precharge the selected bit line, and a potential control unit configured to control a voltage level of the precharged bit line in response to a voltage level corresponding to a value of program data.

Nonvolatile memory device and method of programming the same

A nonvolatile memory device includes a memory cell array configured to comprise memory cells coupled by bit lines and word lines, a page buffer unit configured to comprise page buffers and flag latches, wherein the page buffers, coupled to one or more of the bit lines, each are configured to comprise a plurality of latches for storing logic operation results for error correction and configured to store data read using a read voltage, and the flag latches each are configured to classify the page buffers into some page buffer groups each having a predetermined number and to store flag information indicating whether an error has occurred in each group, and an error detection code (EDC) checker configured to determine whether an error has occurred in each of the page buffer groups.

Nonvolatile memory device and method of operating the same

A page buffer circuit comprises a sense unit, a latch unit, and a bit line voltage control unit. The sense unit is configured to couple a bit line and a sense node in response to a sense control signal in response to the sense control signal. The latch unit includes a plurality of latch circuits configured to latch data programmed or to be programmed. The bit line voltage control unit is configured to classify program states of memory cells, coupled to the selected bit line, into first to ngroups by performing first to nverification operations after a first program operation of a program operation and is configured to control a voltage level of the sense control signal in order to transfer a bit line voltage to the selected bit line.

Page buffer circuit, nonvolatile device including the same, and method of operating the nonvolatile memory device

A non-volatile memory device increases a number of word lines and a storage capacity using a multi level cell. The non-volatile memory device addresses a problem of self-boosting not being adequately generated due to the increased number of word lines. The non-volatile memory device includes a memory cell array configured to have first memory cells for storing first bit information coupled to third word lines except a first word line adjacent to a drain select line and a second word line adjacent to a source select line, and second memory cells coupled to the first word line and the second word line. The second memory cells store second bit information that is smaller than the first bit information.

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Gyeonggi-do, South Korea

Jun Rye Rho