Lextar Electronics Corporation

Tpk Advanced Solutions Inc.

Giant Manufacturing Co., Ltd.

Jun-Rong Chen

Jhao-Cheng Ye

Kuo-Lung Fang

Hsiu-Mei Chou

Shiou-Yi Kuo

Chi-Wen Kuo

You-Zhi She

Shih-Hao Chen

Te-Chung Wang

Chia-Jui Lin

Chun-An Wei

Jui-Yi Chu

Guo-Yi Shiu

Chih-Hao Yang

Kun-Fu Huang

Kuo Lung Fang

Jun-Ping Yang

Xiao-Xia You

Pei-Min Wu

Jun-Jie Zheng

Chang-Hsin Hsieh

Ya-Han Chang

Cheng-Jun Yang

Yamei Chen

Qibin Liu

Chiajui Lin

Deng Wu

Ruibin Yang

Peiqin Xu

Yen-Ching Chu

Yating Hsu

Baolin Liu

Qi-Bin Liu

Qi-Jun Zheng

Yongjin Wu

Sheng-Ho Shu

A method for bicycle fitting includes receiving evaluation factors based on one or more scenario parameters; positioning at least one of a saddle and a handlebar to one or more positions when a user is pedaling; determining values for the evaluation factors according to data received from one or more sensors at the one or more positions; and processing the values to identify one or more recommended positions for the saddle or the handlebar.

Methods and systems for bicycle fitting

A touch module includes a substrate, a first horizontal touch electrode, a second horizontal touch electrode, a first jumper, and a first vertical touch electrode. The first horizontal touch electrode and the second horizontal touch electrode are disposed on the substrate at intervals along a first direction. The first jumper is connected to the first horizontal touch electrode and the second horizontal touch electrode, and has a first main portion and at least two first extending portions, in which the first main portion is between the two first extending portions in the first direction. The two first extending portions are respectively disposed corresponding to the first horizontal touch electrode and the second horizontal touch electrode. The first vertical touch electrode is disposed on the substrate, located between the first horizontal touch electrode and the second horizontal touch electrode in the first direction, and is electrically insulated from the first jumper.

Touch module and touch device

A contact area structure including an organic substrate, an inorganic conductive layer, an organic adhesive layer, and a transparent conductive layer is provided. The organic substrate includes at least one contact pad area including a first block and a second block adjacent to the first block. The inorganic conductive layer is disposed on the organic substrate, in which the inorganic conductive layer is partially disposed on the first block, and a portion of an upper surface of the organic substrate is exposed at the second block. The inorganic conductive layer and the upper surface of the organic substrate are covered by the organic adhesive layer. The transparent conductive layer is disposed on the organic adhesive layer, so that the adhesive strength between the transparent layer and the inorganic conductive layer can be enhanced.

Contact area structure with organic adhesive layer between inorganic conductive layer and transparent conductive layer

A touch module includes a touch panel unit, a conductive adhesive layer and a circuit board. The touch panel unit includes a substrate, a touch sensing structure disposed on the substrate, a signal transmitting structure disposed on the substrate and electrically connected to the touch sensing structure, and a protection layer covering a part of a surface of the signal transmitting structure. The protection layer and the substrate are disposed at two opposite sides of the signal transmitting structure. The conductive adhesive layer has a main portion which covers a region of the signal transmitting structure on which the protection layer is not disposed, and a cover portion which extends from the main portion and covers the protection layer. The circuit board is disposed on the conductive adhesive layer, and the circuit board and the signal transmitting structure are disposed at two opposite sides of the conductive adhesive layer.

Touch module and method for manufacturing the same

A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.

Micro light emitting diode structure and method for manufacturing micro light emitting diode

A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

Side-view light emitting laser element

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

Epitaxial structure with air voids in shape of trapezoid

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.

A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.

Light-emitting semiconductor structure and method for fabricating light-emitting diode device

The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the buffer layer between the insulating micro patterns are exposed. The insulating micro patterns and the buffer layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.

Method for fabricating light-emitting diode device

An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.

The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.

Light emitting diode element

A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

Growing community of inventors

Taichung, Taiwan

Jun-Rong Chen