Samsung Electronics Co., Ltd.

Jun-phyo Lee

Cheol Su Kim

Sang-kyun Park

Jung-Bae Lee

Jung-bae Lee

Chang-Hyun Cho

Young-Gu Kang

Beob-Rae Cho

Yong-hwan Jeong

A semiconductor device includes a main pad part and a sub pad part formed in a peripheral area of at least one side of the main pad part. The sub pad part is spaced apart from the main pad part. The sub pad part operates in a first state in which the sub pad part is short-circuited with the main pad part or in a second state in which the sub pad part is open from the main pad part.

Semiconductor device

The bit-line sense amplifier includes a driving-voltage control circuit and an amplifier. The driving-voltage control circuit generates a first test driving voltage having a voltage level of a pre-charge voltage, a second test driving voltage having a voltage level of a pre-charge voltage added by a voltage difference between a bit-line and a complementary bit-line, and a third test driving voltage having a voltage level of a pre-charge voltage subtracted by the voltage difference in a test mode. The amplifier senses and amplifies a voltage difference between the bit-line and the complementary bit-line.

Bit-line sense amplifier, semiconductor memory device having the same, and method of testing bit-line micro-bridge defect

Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.

Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same

An internal voltage generating circuit of a semiconductor memory device includes a driving current generator that controls the magnitude of a driving current and supplies a controlled driving current in response to signals activated according to an operational mode. A comparison voltage generator receives a reference voltage and an internal power supply voltage, outputs a differentially amplified comparison voltage in response to a voltage difference between the reference voltage and the internal power supply voltage, and operates according to the driving current. A bulk bias controller receives at least two voltages and selectively outputs a voltage as a bulk bias voltage in response to a power-down enable signal, a normal enable signal, and an operating enable signal. An internal voltage driver controls a threshold voltage in response to the bulk bias voltage, controls a current amount in response to the comparison voltage, and outputs the internal power supply voltage.

Internal voltage generating circuit of semiconductor memory device

A reference voltage generator for improving setup voltage characteristics without an increase in a standby current and a method of controlling the same, in which the reference voltage generator includes: a reference voltage generation unit including a resistor connected between a power supply voltage and an output node, for dividing the power voltage, and generating a reference voltage fed to the output node thereof; a voltage detector receiving a feedback of the reference voltage and detecting a level of the reference voltage; and a bypass circuit connected in parallel to the resistor of the reference voltage generation unit and bypassing the resistor in response to an output signal of the voltage detector.

Reference voltage generator having improved setup voltage characteristics and method of controlling the same

An internal voltage generator is disclosed. The internal voltage generator may include a comparator for controlling a voltage of a first node in response to a voltage difference between a reference voltage and an internal voltage, an internal voltage driving portion connected between a driving node and an internal voltage node to apply the internal voltage to the internal voltage node in response to a voltage level of the first node, and/or a leakage current interrupting portion to apply an external voltage to the first node to deactivate the internal voltage driving portion and to interrupt the external voltage applied to the driving node to interrupt a leakage current.

Growing community of inventors

Yongin-si, South Korea

Jun-phyo Lee