Tokyo Electron Limited

Jun Oyabu

Hiroshi Tsujimoto

Makoto Kobayashi

Jun Tamura

Nobuhiro Wada

Mamoru Naoi

Takashi Kitazawa

A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Substrate processing apparatus

Substrate processing method and substrate processing apparatus

Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

Method of setting thickness of dielectric and substrate processing apparatus having dielectric disposed in electrode

The present invention provides a plasma processing apparatus, comprising a chamber for applying a film depositing treatment or an etching treatment to a target object by utilizing plasma, and a gate liner covering the surface of the open portion of a chamber gate for transferring the target object into and out of the chamber so as to prevent the chamber gate from being affected by the plasma. A gate aspect ratio, which is a ratio of the depth of the open portion of the chamber gate to the length in the short-side direction, is determined in accordance with the anode/cathode ratio, which is a ratio in area of the anode region to the cathode region within the chamber, so as to prevent an abnormal discharge within the gate space.

Plasma processing apparatus

Inside a processing chamber of an etching apparatus , a pair of electrodes, i.e., an upper electrode and a lower electrode , are provided. The circumferential edge of the upper electrode is covered by a first ring-shaped body , and a cylindrical body is provided around the first ring-shaped body . A second ring-shaped body is provided around the lower electrode . When the lower electrode is set at the processing position, the second ring-shaped body is positioned inside the cylindrical body to form a plasma space . A gas discharge path is formed between the cylindrical body and the second ring-shaped body . The distance between the cylindrical body and the second ring-shaped body is set so as to ensure that the conductance value of the gas inside the gas discharge path is higher than the conductance value of the gas inside the plasma space . The cylindrical body and the first and second ring-shaped bodies and are heated by the plasma. As a result, a plasma processing apparatus capable of inducing plasma to a workpiece uniformly while creating only a small quantity of particles is provided.

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Nirasaki, Japan

Jun Oyabu